Биполярный транзистор 2SC5140 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC5140
Маркировка: YH-
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.08 W
Макcимально допустимое напряжение коллектор-база (Ucb): 15 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 9 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 1.5 V
Макcимальный постоянный ток коллектора (Ic): 0.02 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 6000 MHz
Ёмкость коллекторного перехода (Cc): 0.5 pf
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: SMPAK
2SC5140 Datasheet (PDF)
2sc5140.pdf
2SC5140Silicon NPN EpitaxialADE-208-227A (Z)2nd. EditionMar. 2001ApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 9 GHz typ High gain, low noise figurePG = 15 dB typ, NF = 1.6 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. CollectorNote: Marking is YH.Attention: This device is very sensitive to ele
2sc5147.pdf
2SC5147TransistorsMedium Power Transistor(Chroma Output) (300V, 0.1A)2SC5147 Features External dimensions (Units : mm)1) High breakdown voltage. (BVCEO = 300V)2) Low collector output capacitance.10.0 4.5 (Typ.3pF at VCB = 30V)3.2 2.8 3) Wide SOA. (safe operating area)4) Ideal for color TV chroma output and amplification of1.21.3 video signals.0.80.752.54
2sc5145.pdf
Power Transistors2SC5145Silicon NPN triple diffusion planar typeUnit: mm8.5 0.2 3.4 0.3For high breakdown voltage high-speed switching6.0 0.5 1.0 0.1Features High-speed switching High collector to base voltage VCBO1.5max. 1.1max. Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max.the printed circu
2sc5141.pdf
2SC5141Silicon NPN EpitaxialADE-208-228A (Z)2nd. EditionMar. 2001ApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 5.8 GHz typ High gain, low noise figurePG = 13 dB typ, NF = 1.6 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. CollectorNote: Marking is YN.Attention: This device is very sensitive to e
2sc5147 3da5147.pdf
2SC5147(3DA5147) NPN /SILICON NPN TRANSISTOR Purpose: Ideal for Color TV chroma output and amplification of video signals. : Features: High breakdown voltage,low collector output capacitance,wide SOA. /Absolute maxim
2sc5148.pdf
isc Silicon NPN Power Transistor 2SC5148DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display,color TVHigh speed switching applicationsABSOLUTE MAXIMUM RATINGS(T =25
2sc5149.pdf
isc Silicon NPN Power Transistor 2SC5149DESCRIPTIONHigh Breakdown Voltage: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for medium resolution displaycolor TVHigh speed switching applicationsABSOLUT
2sc5143.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5143DESCRIPTIONHigh Breakdown Voltage-V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display&colo
2sc5147.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5147DESCRIPTIONHigh breakdown voltage(BVceo=300V).Low collector output capacitance(Typ.3pF@Vce=30V).Wide SOA(safe operating area)Ideal for color TV chroma output and amplificationof video signals100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICAT
2sc5144.pdf
isc Silicon NPN Power Transistor 2SC5144DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1700V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1700 VCBO
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050