Справочник транзисторов. 2SC5140

 

Биполярный транзистор 2SC5140 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC5140
   Маркировка: YH-
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.08 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 15 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 9 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 1.5 V
   Макcимальный постоянный ток коллектора (Ic): 0.02 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 6000 MHz
   Ёмкость коллекторного перехода (Cc): 0.5 pf
   Статический коэффициент передачи тока (hfe): 50
   Корпус транзистора: SMPAK

 Аналоги (замена) для 2SC5140

 

 

2SC5140 Datasheet (PDF)

 ..1. Size:60K  hitachi
2sc5140.pdf

2SC5140
2SC5140

2SC5140Silicon NPN EpitaxialADE-208-227A (Z)2nd. EditionMar. 2001ApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 9 GHz typ High gain, low noise figurePG = 15 dB typ, NF = 1.6 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. CollectorNote: Marking is YH.Attention: This device is very sensitive to ele

 8.1. Size:205K  toshiba
2sc5148.pdf

2SC5140
2SC5140

 8.2. Size:193K  toshiba
2sc5149.pdf

2SC5140
2SC5140

 8.3. Size:191K  toshiba
2sc5143.pdf

2SC5140
2SC5140

 8.4. Size:206K  toshiba
2sc5144.pdf

2SC5140
2SC5140

 8.5. Size:204K  toshiba
2sc5142.pdf

2SC5140
2SC5140

 8.6. Size:51K  rohm
2sc5147.pdf

2SC5140

2SC5147TransistorsMedium Power Transistor(Chroma Output) (300V, 0.1A)2SC5147 Features External dimensions (Units : mm)1) High breakdown voltage. (BVCEO = 300V)2) Low collector output capacitance.10.0 4.5 (Typ.3pF at VCB = 30V)3.2 2.8 3) Wide SOA. (safe operating area)4) Ideal for color TV chroma output and amplification of1.21.3 video signals.0.80.752.54

 8.7. Size:65K  panasonic
2sc5145.pdf

2SC5140
2SC5140

Power Transistors2SC5145Silicon NPN triple diffusion planar typeUnit: mm8.5 0.2 3.4 0.3For high breakdown voltage high-speed switching6.0 0.5 1.0 0.1Features High-speed switching High collector to base voltage VCBO1.5max. 1.1max. Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max.the printed circu

 8.8. Size:62K  hitachi
2sc5141.pdf

2SC5140
2SC5140

2SC5141Silicon NPN EpitaxialADE-208-228A (Z)2nd. EditionMar. 2001ApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 5.8 GHz typ High gain, low noise figurePG = 13 dB typ, NF = 1.6 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. CollectorNote: Marking is YN.Attention: This device is very sensitive to e

 8.9. Size:264K  foshan
2sc5147 3da5147.pdf

2SC5140
2SC5140

2SC5147(3DA5147) NPN /SILICON NPN TRANSISTOR Purpose: Ideal for Color TV chroma output and amplification of video signals. : Features: High breakdown voltage,low collector output capacitance,wide SOA. /Absolute maxim

 8.10. Size:220K  inchange semiconductor
2sc5148.pdf

2SC5140
2SC5140

isc Silicon NPN Power Transistor 2SC5148DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display,color TVHigh speed switching applicationsABSOLUTE MAXIMUM RATINGS(T =25

 8.11. Size:220K  inchange semiconductor
2sc5149.pdf

2SC5140
2SC5140

isc Silicon NPN Power Transistor 2SC5149DESCRIPTIONHigh Breakdown Voltage: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for medium resolution displaycolor TVHigh speed switching applicationsABSOLUT

 8.12. Size:181K  inchange semiconductor
2sc5143.pdf

2SC5140
2SC5140

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5143DESCRIPTIONHigh Breakdown Voltage-V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display&colo

 8.13. Size:169K  inchange semiconductor
2sc5147.pdf

2SC5140
2SC5140

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5147DESCRIPTIONHigh breakdown voltage(BVceo=300V).Low collector output capacitance(Typ.3pF@Vce=30V).Wide SOA(safe operating area)Ideal for color TV chroma output and amplificationof video signals100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICAT

 8.14. Size:211K  inchange semiconductor
2sc5144.pdf

2SC5140
2SC5140

isc Silicon NPN Power Transistor 2SC5144DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1700V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1700 VCBO

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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