2SC5147 - описание и поиск аналогов

2SC5147 Transistors Medium Power Transistor (Chroma Output) (300V, 0.1A) 2SC5147 Features External dimensions (Units mm) 1) High breakdown voltage. (BVCEO = 300V) 2) Low collector output capacitance. 10.0 4.5 (Typ.3pF at VCB = 30V) 3.2 2.8 3) Wide SOA. (safe operating area) 4) Ideal for color TV chroma output and amplification of 1.2 1.3 video signals. 0.8 0.75 2.54

2SC5147(3DA5147) NPN /SILICON NPN TRANSISTOR Purpose Ideal for Color TV chroma output and amplification of video signals. Features High breakdown voltage,low collector output capacitance,wide SOA. /Absolute maxim

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5147 DESCRIPTION High breakdown voltage(BVceo=300V). Low collector output capacitance(Typ.3pF@Vce=30V). Wide SOA(safe operating area) Ideal for color TV chroma output and amplification of video signals 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT

Power Transistors 2SC5145 Silicon NPN triple diffusion planar type Unit mm 8.5 0.2 3.4 0.3 For high breakdown voltage high-speed switching 6.0 0.5 1.0 0.1 Features High-speed switching High collector to base voltage VCBO 1.5max. 1.1max. Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max. the printed circu

2SC5140 Silicon NPN Epitaxial ADE-208-227A (Z) 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 9 GHz typ High gain, low noise figure PG = 15 dB typ, NF = 1.6 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is YH . Attention This device is very sensitive to ele

2SC5141 Silicon NPN Epitaxial ADE-208-228A (Z) 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 5.8 GHz typ High gain, low noise figure PG = 13 dB typ, NF = 1.6 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is YN . Attention This device is very sensitive to e

isc Silicon NPN Power Transistor 2SC5149 DESCRIPTION High Breakdown Voltage V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for medium resolution display color TV High speed switching applications ABSOLUT

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5143 DESCRIPTION High Breakdown Voltage- V = 1700V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display& colo

isc Silicon NPN Power Transistor 2SC5144 DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1700V(Min) (BR)CBO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1700 V CBO