2SC5213 - описание и поиск аналогов

2SC5219 Silicon NPN Triple Diffused Planar Application Character display horizontal deflection output Features High breakdown voltage VCES = 1700 V High speed switching tf = 0.15 sec (typ) Built-in damper diode type Isolated package TO-3P FM Outline TO-3PFM 2 1 1. Base ID 2. Collector 3. Emitter 1 3 2 3 2SC5219 Absolute Maximum Ratings (Ta = 25 C

2SC5218 Silicon NPN Epitaxial ADE-208-279 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 9 GHz typ High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC5218 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

http //www.idc-com.co.jp 854-0065 6-41

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

SMD Type Transistors NPN Transistors 2SC5210 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=250V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 250 V Emitter - Base Voltag

SMD Type Transistors NPN Transistors 2SC5216 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=8V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto

SMD Type Transistors NPN Transistors 2SC5211 Features 1.70 0.1 High voltage VCEO=50V. Small package for mounting. Complementary to 2SA1945 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 55 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 4 C

SMD Type Transistors NPN Transistors 2SC5212 Features 1.70 0.1 Low Collector saturation voltage High fT fT=180MHz typ Excellent liinearity of DC forward current gain 0.42 0.1 High collector current ICP=1A 0.46 0.1 Complementary to 2SA1946 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Ba

SMD Type Transistors NPN Transistors 2SC5218 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=9V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec

SMD Type Transistors NPN Transistors 2SC5214 1.70 0.1 Features High fT fT=100MHz typ Excellent liinearity of DC forward current gain High collector current ICP=1.5A 0.42 0.1 0.46 0.1 Complementary to 2SA1947 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emi

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC5218 DESCRIPTION High Gain Bandwidth Product f = 9 GHz TYP. T High Gain, Low Noise Figure PG = 13.0 dB TYP., NF = 1.2 dB TYP @ f = 900 MHz 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in VHF UHF amplifiers. ABSOLUTE MAXIMUM RA