2SC5216 datasheet, аналоги, основные параметры
Наименование производителя: 2SC5216 📄📄
Маркировка: FB
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 15 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 8 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 800 MHz
Ёмкость коллекторного перехода (Cc): 1 pf
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: SC-59
TO-236
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Аналоги (замена) для 2SC5216
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2SC5216 даташит
..3. Size:897K kexin
2sc5216.pdf 
SMD Type Transistors NPN Transistors 2SC5216 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=8V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto
8.1. Size:35K hitachi
2sc5219.pdf 
2SC5219 Silicon NPN Triple Diffused Planar Application Character display horizontal deflection output Features High breakdown voltage VCES = 1700 V High speed switching tf = 0.15 sec (typ) Built-in damper diode type Isolated package TO-3P FM Outline TO-3PFM 2 1 1. Base ID 2. Collector 3. Emitter 1 3 2 3 2SC5219 Absolute Maximum Ratings (Ta = 25 C
8.2. Size:46K hitachi
2sc5218.pdf 
2SC5218 Silicon NPN Epitaxial ADE-208-279 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 9 GHz typ High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC5218 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base
8.3. Size:169K isahaya
2sc5210.pdf 
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
8.4. Size:60K isahaya
2sc5211.pdf 
http //www.idc-com.co.jp 854-0065 6-41
8.5. Size:161K isahaya
2sc5212.pdf 
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
8.7. Size:155K isahaya
2sc5214.pdf 
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
8.8. Size:909K kexin
2sc5210.pdf 
SMD Type Transistors NPN Transistors 2SC5210 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=250V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 250 V Emitter - Base Voltag
8.9. Size:515K kexin
2sc5211.pdf 
SMD Type Transistors NPN Transistors 2SC5211 Features 1.70 0.1 High voltage VCEO=50V. Small package for mounting. Complementary to 2SA1945 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 55 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 4 C
8.10. Size:889K kexin
2sc5212.pdf 
SMD Type Transistors NPN Transistors 2SC5212 Features 1.70 0.1 Low Collector saturation voltage High fT fT=180MHz typ Excellent liinearity of DC forward current gain 0.42 0.1 High collector current ICP=1A 0.46 0.1 Complementary to 2SA1946 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Ba
8.11. Size:964K kexin
2sc5218.pdf 
SMD Type Transistors NPN Transistors 2SC5218 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=9V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec
8.12. Size:1175K kexin
2sc5214.pdf 
SMD Type Transistors NPN Transistors 2SC5214 1.70 0.1 Features High fT fT=100MHz typ Excellent liinearity of DC forward current gain High collector current ICP=1.5A 0.42 0.1 0.46 0.1 Complementary to 2SA1947 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emi
8.13. Size:170K inchange semiconductor
2sc5218.pdf 
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC5218 DESCRIPTION High Gain Bandwidth Product f = 9 GHz TYP. T High Gain, Low Noise Figure PG = 13.0 dB TYP., NF = 1.2 dB TYP @ f = 900 MHz 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in VHF UHF amplifiers. ABSOLUTE MAXIMUM RA
Другие транзисторы: 2SC5194, 2SC5195, 2SC5209, 2SC5210, 2SC5211, 2SC5212, 2SC5213, 2SC5214, BC557, 2SC5218, 2SC5223, 2SC5225, 2SC5226, 2SC5227, 2SC5228, 2SC5229, 2SC5230
