2SC5218Silicon NPN EpitaxialADE-208-2791st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 9 GHz typ High gain, low noise figurePG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHzOutlineMPAK311. Emitter2. Base23. Collector2SC5218Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base

SMD Type TransistorsNPN Transistors2SC5218SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=9V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC5218DESCRIPTIONHigh Gain Bandwidth Productf = 9 GHz TYP.THigh Gain, Low Noise FigurePG = 13.0 dB TYP., NF = 1.2 dB TYP @ f = 900 MHz100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in VHF ~ UHF amplifiers.ABSOLUTE MAXIMUM RA

Transistor2SC5216Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh transition frequency fT.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25

Transistor2SC5216Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh transition frequency fT.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25

2SC5219Silicon NPN Triple Diffused PlanarApplicationCharacter display horizontal deflection outputFeatures High breakdown voltageVCES = 1700 V High speed switchingtf = 0.15 sec (typ) Built-in damper diode type Isolated packageTO-3PFMOutlineTO-3PFM211. Base ID2. Collector 3. Emitter13232SC5219Absolute Maximum Ratings (Ta = 25C

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

http://www.idc-com.co.jp 854-0065 6-41

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

http://www.idc-com.co.jp 854-0065 6-41

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

SMD Type TransistorsNPN Transistors2SC5210SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=250V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 250 V Emitter - Base Voltag

SMD Type TransistorsNPN Transistors2SC5216SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=8V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto

SMD Type TransistorsNPN Transistors2SC5211 Features 1.70 0.1 High voltage VCEO=50V. Small package for mounting. Complementary to 2SA19450.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 55 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 4 C

SMD Type TransistorsNPN Transistors2SC5212 Features1.70 0.1 Low Collector saturation voltage High fT fT=180MHz typ Excellent liinearity of DC forward current gain0.42 0.1 High collector current ICP=1A 0.46 0.1 Complementary to 2SA19461.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Ba

SMD Type TransistorsNPN Transistors2SC52141.70 0.1 Features High fT fT=100MHz typ Excellent liinearity of DC forward current gain High collector current ICP=1.5A0.42 0.10.46 0.1 Complementary to 2SA19471.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emi