Биполярный транзистор 2SC5684 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC5684
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1.8 W
Макcимально допустимое напряжение коллектор-база (Ucb): 900 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 0.8 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: 2-10T1A
2SC5684 Datasheet (PDF)
2sc5683.pdf
Ordering number : ENN6653A2SC5683NPN Triple Diffused Planar Silicon Transistor2SC5683Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SC5683] Adoption of MBIT process.5.63.416.03.12.82.0 2
2sc5689.pdf
Ordering number : ENN6654A2SC5689NPN Triple Diffused Planar Silicon Transistor2SC5689Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SC5689] Adoption of MBIT process.5.63.4 On-chip damper di
2sc5682.pdf
Ordering number : ENN6608A2SC5682NPN Triple Diffused Planar Silicon Transistor2SC5682Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SC5682] Adoption of MBIT process.5.63.416.03.12.82.0 2.1
2sc5680.pdf
Ordering number : ENN6652A2SC5680NPN Triple Diffused Planar Silicon Transistor2SC5680Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SC5680] Adoption of MBIT process.5.63.416.03.12.82.0 2
2sc5681.pdf
Ordering number : ENN6607A2SC5681NPN Triple Diffused Planar Silicon Transistor2SC5681Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SC5681] Adoption of MBIT process.5.63.416.03.12.82.0 2.1
2sc5686.pdf
Power Transistors2SC5686Silicon NPN triple diffusion mesa typeHorizontal deflection output for TV, CRT monitorUnit: mm15.50.5 3.00.3 3.20.155 Features High breakdown voltage: VCBO 2 000 V High-speed switching: tf
2sc5689.pdf
isc Silicon NPN Power Transistor 2SC5689DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050