2SC5684 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5684
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.8 W
Maximum Collector-Base Voltage |Vcb|: 900 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: 2-10T1A
2SC5684 Transistor Equivalent Substitute - Cross-Reference Search
2SC5684 Datasheet (PDF)
2sc5683.pdf
Ordering number : ENN6653A2SC5683NPN Triple Diffused Planar Silicon Transistor2SC5683Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SC5683] Adoption of MBIT process.5.63.416.03.12.82.0 2
2sc5689.pdf
Ordering number : ENN6654A2SC5689NPN Triple Diffused Planar Silicon Transistor2SC5689Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SC5689] Adoption of MBIT process.5.63.4 On-chip damper di
2sc5682.pdf
Ordering number : ENN6608A2SC5682NPN Triple Diffused Planar Silicon Transistor2SC5682Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SC5682] Adoption of MBIT process.5.63.416.03.12.82.0 2.1
2sc5680.pdf
Ordering number : ENN6652A2SC5680NPN Triple Diffused Planar Silicon Transistor2SC5680Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SC5680] Adoption of MBIT process.5.63.416.03.12.82.0 2
2sc5681.pdf
Ordering number : ENN6607A2SC5681NPN Triple Diffused Planar Silicon Transistor2SC5681Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SC5681] Adoption of MBIT process.5.63.416.03.12.82.0 2.1
2sc5686.pdf
Power Transistors2SC5686Silicon NPN triple diffusion mesa typeHorizontal deflection output for TV, CRT monitorUnit: mm15.50.5 3.00.3 3.20.155 Features High breakdown voltage: VCBO 2 000 V High-speed switching: tf
2sc5689.pdf
isc Silicon NPN Power Transistor 2SC5689DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
