Биполярный транзистор 2SC5849 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC5849
Маркировка: WY
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.08 W
Макcимально допустимое напряжение коллектор-база (Ucb): 15 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 6 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 1.5 V
Макcимальный постоянный ток коллектора (Ic): 0.08 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 9000 MHz
Ёмкость коллекторного перехода (Cc): 0.85 pf
Статический коэффициент передачи тока (hfe): 90
Корпус транзистора: MFPAK
2SC5849 Datasheet (PDF)
2sc5849.pdf
2SC5849Silicon NPN EpitaxialVHF/UHF wide band amplifierADE-208-1469 (Z)Rev. 0Nov. 2001Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm)OutlineMFPAK3121. Emitter2. Base3. CollectorNote: Marking is WY.2SC5849Absolute Maximum Ratings(Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage
2sc5843.pdf
DATA SHEETNPN SILICON GERMANIUM RF TRANSISTOR2SC5843NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES Ideal for low noise, high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz SiGe technology (fT
2sc5845.pdf
Transistors2SC5845Silicon NPN epitaxial planar typeFor general amplificationUnit: mm0.40+0.100.050.16+0.100.06 Features3 High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and au-tomatic insertion through the tape packing and the magazine pack-1 2ing(0.95) (0.95)1.90.12.90+0.200.05 Absolu
2sc5840.pdf
Power Transistors2SC5840Silicon NPN epitaxial planar typeUnit: mm4.60.2Power supply for Audio & Visual equipments9.90.32.90.2such as TVs and VCRsIndustrial equipments such as DC-DC converters 3.20.1 Features High-speed switching (tstg: storage time/tf: fall time is short)1.40.2 Low collector-emitter saturation voltage VCE(sat)2.60.11.60.2
2sc5846.pdf
TransistorsSSSMini3-F1 Package2SC5846Silicon NPN epitaxial planar typeFor general amplificationUnit: mm0.33+0.05 0.10+0.050.02 0.02 Features3 High forward current transfer ratio hFE SSS-mini type package, allowing downsizing and thinning of theequipment and automatic insertion through the tape packing0.23+0.05 1 20.02(0.40)(0.40)0.800.051.20
2sc5841.pdf
Power Transistors2SC5841Silicon NPN epitaxial planar typeUnit: mmPower supply for Audio & Visual equipments10.00.2 5.00.11.00.2such as TVs and VCRsIndustrial equipments such as DC-DC converters Features1.20.1C 1.0 High-speed switching (tstg: storage time/tf: fall time is short)1.480.22.250.2 Low collector-emitter saturation voltage VCE(sat)0.
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050