2SC5849 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5849
SMD Transistor Code: WY
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.08 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 6 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.08 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 9000 MHz
Collector Capacitance (Cc): 0.85 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: MFPAK
2SC5849 Transistor Equivalent Substitute - Cross-Reference Search
2SC5849 Datasheet (PDF)
2sc5849.pdf
2SC5849Silicon NPN EpitaxialVHF/UHF wide band amplifierADE-208-1469 (Z)Rev. 0Nov. 2001Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm)OutlineMFPAK3121. Emitter2. Base3. CollectorNote: Marking is WY.2SC5849Absolute Maximum Ratings(Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage
2sc5843.pdf
DATA SHEETNPN SILICON GERMANIUM RF TRANSISTOR2SC5843NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES Ideal for low noise, high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz SiGe technology (fT
2sc5845.pdf
Transistors2SC5845Silicon NPN epitaxial planar typeFor general amplificationUnit: mm0.40+0.100.050.16+0.100.06 Features3 High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and au-tomatic insertion through the tape packing and the magazine pack-1 2ing(0.95) (0.95)1.90.12.90+0.200.05 Absolu
2sc5840.pdf
Power Transistors2SC5840Silicon NPN epitaxial planar typeUnit: mm4.60.2Power supply for Audio & Visual equipments9.90.32.90.2such as TVs and VCRsIndustrial equipments such as DC-DC converters 3.20.1 Features High-speed switching (tstg: storage time/tf: fall time is short)1.40.2 Low collector-emitter saturation voltage VCE(sat)2.60.11.60.2
2sc5846.pdf
TransistorsSSSMini3-F1 Package2SC5846Silicon NPN epitaxial planar typeFor general amplificationUnit: mm0.33+0.05 0.10+0.050.02 0.02 Features3 High forward current transfer ratio hFE SSS-mini type package, allowing downsizing and thinning of theequipment and automatic insertion through the tape packing0.23+0.05 1 20.02(0.40)(0.40)0.800.051.20
2sc5841.pdf
Power Transistors2SC5841Silicon NPN epitaxial planar typeUnit: mmPower supply for Audio & Visual equipments10.00.2 5.00.11.00.2such as TVs and VCRsIndustrial equipments such as DC-DC converters Features1.20.1C 1.0 High-speed switching (tstg: storage time/tf: fall time is short)1.480.22.250.2 Low collector-emitter saturation voltage VCE(sat)0.
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
