Биполярный транзистор 2SA1855 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA1855
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 1.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 150 MHz
Ёмкость коллекторного перехода (Cc): 39 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: FLP
2SA1855 Datasheet (PDF)
2sa1852 2sc4826.pdf
Ordering number : ENN5495A2SA1852 / 2SC4826PNP / NPN Epitaxial Planar Silicon Transistors2SA1852 / 2SC4826High Definition CRT DisplayVideo Output ApplicationsApplicationsPackage Dimensions High definition CRT display video output,unit : mmwide-band amplifer.2084B[2SA1852 / 2SC4826]Features 4.51.9 2.610.51.2 1.4 Adoption of FBET process. High fT : fT=
2sa1854.pdf
Ordering number:EN4133PNP Epitaxial Planar Silicon Transistor2SA185420V/5A Switching ApplicationsApplications Package Dimensions Strobes, power supplies, relay drivers, lamp drivers. unit:mm2084BFeatures [2SA1854] Adoption of FBET and MBIT processes. Large allowable collector dissipation. Low saturation voltage. Large current capacity. Fast switching sp
2sa1857.pdf
Ordering number:EN4644PNP Epitaxial Planar Silicon Transistor2SA1857FM, RF, MIX, IF Amplifier High-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions High power gain : PG=25dB typ (f=100MHz).unit:mm High cutoff frequency : fT=750MHz typ.2059A Low collector-to-emitter saturation voltage.[2SA1857] Complementary pair with the 2SC4400.1
2sa1858.pdf
Transistor2SA1858Silicon PNP epitaxial planer typeFor general amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 300 V+0.15 +0.150.45 0.1 0.45 0.1Collector to emitter voltage VCEO 300 V1.27 1.27Emitter to base vol
2sa1858 e.pdf
Transistor2SA1858Silicon PNP epitaxial planer typeFor general amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 300 V+0.15 +0.150.45 0.1 0.45 0.1Collector to emitter voltage VCEO 300 V1.27 1.27Emitter to base vol
2sa1859 2sa1859a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1859 2SA1859A DESCRIPTION With TO-220F package Complement to type 2SC4883/4883A APPLICATIONS For audio output driver and TV velocity-modulation applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARA
2sa1859.pdf
2SA1859/1859ASilicon PNP Epitaxial Planar Transistor (Complement to type 2SC4883/A)Application : Audio Output Driver and TV Velocity-modulation(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical CharacteristicsExternal Dimensions FM20(TO220F)RatingsRatingsSymbol UnitSymbol Conditions Unit2SA1859 2SA1859A2SA1859 2SA1859A0.24.20.210.1c0.52.8VCBO 15
2sa1859 2sa1859a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1859 2SA1859A DESCRIPTION With TO-220F package Complement to type 2SC4883/4883A APPLICATIONS For audio output driver and TV velocity-modulation applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25
2sa1859.pdf
isc Silicon PNP Power Transistor 2SA1859DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOComplement to Type 2SC4883Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output driver and TV velocity-modulationapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
2sa1859a.pdf
isc Silicon PNP Power Transistor 2SA1859ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -180V(Min)(BR)CEOComplement to Type 2SC4883AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output driver and TV velocity-modulationapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
