2SA1964 datasheet, аналоги, основные параметры
Наименование производителя: 2SA1964 📄📄
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 20 W
Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 150 MHz
Ёмкость коллекторного перехода (Cc): 35 pf
Статический коэффициент передачи тока (hFE): 60
Корпус транзистора: TO-220FP
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Аналоги (замена) для 2SA1964
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2SA1964 даташит
..1. Size:38K rohm
2sa1964.pdf 
2SA1964 Transistors Transistors 2SC5248 (SPEC-A315) (SPEC-C315) 282
..2. Size:38K rohm
2sa1964 2sc5248.pdf 
2SA1964 Transistors Transistors 2SC5248 (SPEC-A315) (SPEC-C315) 282
..4. Size:179K lzg
2sa1964 3ca1964.pdf 
2SA1964(3CA1964) PNP /SILICON PNP TRANSISTOR ( ) Purpose High-voltage switching(audio output amplifier transistor, stabilized power supply transistor). h f 2SC5248(3DA5248) T FE Features Flat DC curren
..5. Size:218K inchange semiconductor
2sa1964.pdf 
isc Silicon PNP Power Transistor 2SA1964 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SC5248 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXI
8.1. Size:129K toshiba
2sa1962.pdf 
2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit mm High breakdown voltage VCEO = -230 V (min) Complementary to 2SC5242 Recommended for 80-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -230 V Colle
8.2. Size:137K sanyo
2sa1969.pdf 
Ordering number 5098 PNP Epitaxial Planar Silicon Transistor 2SA1969 High-Frequency Medium-Output Amplifier,Medium- Current Ultrahigh-Speed Switching Applications Features Package Dimensions High fT (fT=1.7GHz typ). unit mm Large current capacity (IC= 400mA). 2038A [2SA1969] 1 Base 2 Collector 3 Emitter SANYO PCP (Bottom view) Specifications Absolute Maximum R
8.3. Size:90K sanyo
2sa1967.pdf 
Ordering number 5182 NPN Triple Diffused Planar Silicon Transistor 2SA1967 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min= 900V). unit mm Small Cob (Cob typ=2.2pF). 2010C High reliability (Adoption of HVP process). [2SA1967] JEDEC TO-220AB 1 Base EIAJ SC46 2 Collector Specifications 3
8.4. Size:85K sanyo
2sa1965.pdf 
Ordering number 5031 PNP Epitaxial Planar Silicon Transistor 2SA1965 Muting Circuit Applications Features Package Dimensions Very small-sized package permitting 2SA1965- unit mm applied sets to be made small and slim. 2106A Small output capacitance. [2SA1965] Low collectot-to-emitter saturation voltage. Small ON resistance. 1 Base 2 Emitter 3 Collector SANY
8.5. Size:159K sanyo
2sa1963.pdf 
Ordering number 5230 PNP Epitaxial Planar Silicon Transistor 2SA1963 High-Frequecy Low-Noise Amplifier, Ultrahigh-Speed Switching Applications Features Package Dimensions Low noise NF=1.5dB typ (f=1GHz). unit mm High gain S2le 2=9dB typ (f=1GHz). 2018B High cutoff frequency fT=5GHz typ. [2SA1963] 1 Base 2 Emitter 3 Collector Specifications SANYO CP
8.6. Size:30K sanyo
2sa1968ls.pdf 
Ordering number ENN5183B 2SA1968LS PNP Triple Diffused Planar Silicon Transistor 2SA1968LS High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=--900V). unit mm Small Cob(Cob typ=2.2pF). 2079D High reliability(Adoption of HVP process). [2SA1968LS] Package of full isolation type. 10.0 4.5 3.2
8.7. Size:91K sanyo
2sa1968.pdf 
Ordering number 5183 NPN Triple Diffused Planar Silicon Transistor 2SA1968 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min= 900V). unit mm Small Cob (Cob typ=2.2pF). 2079B High reliability (Adoption of HVP process). [2SA1968] Package of full isolation type. 1 Base 2 Collector 3 Emitte
8.8. Size:478K fairchild semi
2sa1962 fja4213.pdf 
January 2009 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability IC = -17A TO-3P High Power Dissipation 130watts 1 High Frequency 30MHz. 1.Base 2.Collector 3.Emitter High Voltage VCEO= -250V Wide S.O.A for reliable operation. Excel
8.9. Size:560K onsemi
2sa1962rtu 2sa1962otu fja4213rtu fja4213otu.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
8.10. Size:37K panasonic
2sa1961.pdf 
Transistor 2SA1961 Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SC5419 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to emitter voltage VCEO. 0.65 max. Absolute Maximum Ratings (Ta=25 C) +0.1 0.45 0.05 Parameter Symbol Ratings Unit 2.5 0.5 2.5 0.5 Collector to base voltage VCBO 200 V 1 2 3 Col
8.11. Size:41K panasonic
2sa1961 e.pdf 
Transistor 2SA1961 Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SC5419 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to emitter voltage VCEO. 0.65 max. Absolute Maximum Ratings (Ta=25 C) +0.1 0.45 0.05 Parameter Symbol Ratings Unit 2.5 0.5 2.5 0.5 Collector to base voltage VCBO 200 V 1 2 3 Col
8.12. Size:29K hitachi
2sa1960.pdf 
2SA1960 Silicon NPN Epitaxial ADE-208-392 1st. Edition Application Wide band video output amplifier for color CRT monitor. High frequency high voltage amplifier. High speed power switching. Complementary pair with 2SC5225. Features High voltage large current operation. VCEO = 80 V, IC = 300 mA High fT. fT = 1.3 GHz Small output capacitance. Cob =
8.13. Size:231K jmnic
2sa1962.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1962 DESCRIPTION With TO-3P(I) package Complement to type 2SC5242 High collector voltage VCEO=-230V(Min) APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.
8.14. Size:107K inchange semiconductor
2sa1962.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1962 DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= -230V(Min) Good Linearity of hFE Complement to Type 2SC5242 APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(
Другие транзисторы: 2SA1947, 2SA1948, 2SA1953, 2SA1954, 2SA1955, 2SA1960, 2SA1961, 2SA1963, BD222, 2SA1965, 2SA1969, 2SA1973, 2SA1977, 2SA1978, 2SA1979, 2SA1982, 2SA1989
