Transistors2SA2046Silicon PNP epitaxial planer typeUnit: mmFor DC-DC converter0.40+0.10-0.050.16+0.101.45 -0.063 Features Low collector to emitter saturation voltage VCE(sat) Mini3-G1 type package, allowing downsizing and thinning of the1 2equipment and automatic insertion through the tape packing0.95 0.951.900.202.90+0.20 Absolute Maximum Ratings Ta

Ordering number : ENN6913A2SA2040 / 2SC5707PNP / NPN Epitaxial Planar Silicon Transistors2SA2040 / 2SC5707High Current Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switchin

Ordering number : ENN69152SA2044 / 2SC5710PNP / NPN Epitaxial Planar Silicon Transistors2SA2044 / 2SC5710DC / DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm2045B[2SA2044 / 2SC5710]Features6.5 Adoption of FBET and MBIT processes.2.35.00.54 Large current capacitance. Low collecto

Ordering number : ENN69142SA2043 / 2SC5709PNP / NPN Epitaxial Planar Silicon Transistors2SA2043 / 2SC5709DC / DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm2045B[2SA2043 / 2SC5709]Features6.5 Adoption of FBET and MBIT processes. 2.35.00.54 Large current capacitance. Low collector

Ordering number : ENN69132SA2040/2SC5707PNP / NPN Epitaxial Planar Silicon Transistors2SA2040 / 2SC5707High Current Switching ApplicationsApplications Package Dimensions DC-DC converter, relay drivers, lamp drivers, unit : mmmotor drivers, strobes. 2045B[2SA2040 / 2SC5707]Features6.52.35.00.5 Adoption of FBET, MBIT process.4 Large current capacitance.

2SA2049 Transistor Medium power transistor (-30V, -2.0A) 2SA2049 External dimensions (Units : mm) Features 1) High speed switching. (Tf : Typ. : 20ns at IC = -2.0A) 4.0MPT31.0 2.5 0.52) Low saturation voltage, typically (1) (Typ. : -250mV at IC = -1.0A, IB = -100mA) (2)3) Strong discharge power for inductive load and (3)capacitance load. 4) Complements the 2S

2SA2047 Transistor Medium power transistor (-30V, -0.5A) 2SA2047 External dimensions (Units : mm) Features 1) High speed switching. (Tf : Typ. : 40ns at IC = -500mA) UMT32) Low saturation voltage, typically (Typ. : -150mV at IC = -100A, IB = -100mA) 1.253) Strong discharge power for inductive load and 2.1capacitance load. 4) Complements the 2SC5729 (1)Emitter Ea

2SA2048 Transistor Medium power transistor (-30V, -1.0A) 2SA2048 External dimensions (Units : mm) Features 1) High speed switching. (Tf : Typ. : 20ns at IC = -1.0A) 2.81.6TSMT32) Low saturation voltage, typically (Typ. : -150mV at IC = -500mA, IB = -50mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5730 (1)BaseEach l

Ordering number : EN6913B2SA2040/2SC5707Bipolar Transistorhttp://onsemi.com(-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

Ordering number : EN6913B2SA2040/2SC5707Bipolar Transistorhttp://onsemi.com(-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

isc Silicon PNP Power Transistor 2SA2040DESCRIPTIONLarge current capacitanceHigh-speed switching100% avalanche testedHigh allowable power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SC5707APPLICATIONSDC/DC converter,relay drivers,lamp drivers,motordrivers,flashABSOLUTE MAXIMUM RATINGS(T =25