Биполярный транзистор 2SA2057 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA2057
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 20 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 90 MHz
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: TO-220D-A1
2SA2057 Datasheet (PDF)
2sa2057.pdf
Power Transistors2SA2057Silicon PNP epitaxial planar typeUnit: mm4.60.2Power supply for audio & visual equipments9.90.32.90.2such as TVs and VCRsIndustrial equipments such as DC-DC converters 3.20.1 Features High speed switching (tstg: storage time/tf: fall time is short) Low collector-emitter saturation voltage VCE(sat)1.40.22.60.1 Supe
2sa2057.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2057DESCRIPTIONHigh speed switchingLow collector-emitter saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supply for audio & visual equipments such asTVS and VCRSIndustrial equipments such as DC-DC convertersABSOLU
2sa2056.pdf
2SA2056 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2056 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.2 V (max) High-speed switching: tf = 90 ns (typ.) Maximum Ratings (Ta = 25C) Characteristics Symb
2sa2058.pdf
2SA2058 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2058 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteri
2sa2059.pdf
2SA2059 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2059 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (I = -0.5 A) C Low collector-emitter saturation voltage: V = -0.19 V (max) CE (sat) High-speed switching: t = 40 ns (typ.) fMaximum Ratings (Ta = 25C) Characterist
2sa2050.pdf
2SA2050(BR3CA2050F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F PNP Silicon PNP transistor in a TO-220F Plastic Package. / Features , High VCEO, small ICBO and VCE(sat). / Applications Color TV
2sa2058.pdf
SMD Type TransistorsPNP Transistors2SA2058SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features High DC current gain: hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage:1 2 VCE (sat) = -0.19 V (max)+0.1+0.050.95 -0.1 0.1 -0.01+0.1 High-speed switching: tf = 25 ns (typ.)1.9 -0.11.Base2.Emitter3.collector Absolute Max
2sa2050.pdf
isc Silicon PNP Power Transistor 2SA2050DESCRIPTIONHigh DC current amplifier rateh :60-240@VCE=-5V,IC=-0.2AFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral Purpose Switching and AmplificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -180 VCBOV Collector-Emitter Vo
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050