2SA2101 datasheet и подбор замены

 ..1. Size:60K  panasonic
 2sa2101.pdf 

Power Transistors 2SA2101 Silicon PNP epitaxial planar type Unit mm 4.6 0.2 Power supply for Audio & Visual equipments 9.9 0.3 2.9 0.2 such as TVs and VCRs Industrial equipments such as DC-DC converters 3.2 0.1 Features High-speed switching (tstg storage time/tf fall time is short) 1.4 0.2 Low collector-emitter saturation voltage VCE(sat) 2.6 0.1 1.6 0.2

 8.1. Size:48K  panasonic
 2sa2102.pdf 

Power Transistors 2SA2102 Silicon PNP epitaxial planar type Unit mm 4.6 0.2 Power supply for Audio & Visual equipments 9.9 0.3 2.9 0.2 such as TVs and VCRs Industrial equipments such as DC-DC converters 3.2 0.1 Features High-speed switching (tstg storage time/tf fall time is short) 1.4 0.2 Low collector-emitter saturation voltage VCE(sat) 2.6 0.1 1.6 0.2

 9.1. Size:206K  toshiba
 2sa2184.pdf 

2SA2184 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2184 High Voltage Switching Applications Unit mm High voltage VCEO = -550 V High speed tf = 40 ns (typ.) (IC = -0.5A) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -550 V Collector-emitter voltage VCEO -550 V Emitter-base voltage VEBO -7 V DC IC -1

 9.2. Size:179K  toshiba
 2sa2183.pdf 

2SA2183 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2183 High Current Switching Applications Unit mm Low collector-emitter saturation VCE(sat) = -1.0 V max Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -60 V Emitter-base voltage VEBO -7 V DC IC -5.0 A Collector current

 9.3. Size:151K  toshiba
 2sa2154ct.pdf 

2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA2154CT General Purpose Amplifier Applications High voltage and high current VCEO = -50V, IC = -100mA (max) Unit mm 0.6 0.05 Excellent hFE linearity 0.5 0.03 hFE (IC = -0.1 mA) / hFE (IC = -2 mA)= 0.95 (typ.) High hFE hFE = 120 to 400 Complementary to 2SC6026CT Absolute M

 9.4. Size:166K  toshiba
 2sa2182.pdf 

2SA2182 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2182 Unit mm Power Amplifier Applications Driver Stage Amplifier Applications High transition frequency fT = 80 MHz (typ.) Absolute Maximum Ratings (Tc = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO - 230 V Collector-emitter voltage VCEO - 230 V Emitter-base voltage VEBO - 5 V DC IC - 1.0 A

 9.5. Size:151K  toshiba
 2sa2154mfv.pdf 

2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154MFV General-Purpose Amplifier Applications Unit mm 1.2 0.05 High voltage and high current 0.80 0.05 VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity 1 hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) 1 High hFE hFE = 120 400 Complementary to 2SC6026MFV 3

 9.6. Size:184K  toshiba
 2sa2190.pdf 

2SA2190 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor Type 2SA2190 Unit mm Power Amplifier Applications Driver Stage Amplifier Applications High transition frequency fT = 200 MHz (typ.) Absolute Maximum Ratings (Tc = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO - 180 V Collector-emitter voltage VCEO - 180 V Emitter-base voltage VEBO -

 9.7. Size:177K  toshiba
 2sa2120.pdf 

2SA2120 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2120 Power Amplifier Applications Unit mm Complementary to 2SC5948 Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit VCBO Collector-base voltage -200 V VCEO Collector-emitter voltage -200 V VEBO Emitter-base voltage -5 V

 9.8. Size:126K  toshiba
 2sa2195.pdf 

2SA2195 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2195 High-Speed Switching Applications Unit mm DC-DC Converter Applications 2.1 0.1 Strobe Applications 1.7 0.1 High DC current gain hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage VCE (sat) = -0.2 V (max) 1 High-speed switching tf = 90 ns (typ.) 2 3 Absolute Maximum Ratings

 9.9. Size:154K  toshiba
 2sa2142.pdf 

2SA2142 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142 High-Voltage Switching Applications Unit mm High breakdown voltage VCEO = -600 V Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO -600 V Collector-emitter voltage VCEO -600 V Emitter-base voltage VEBO -7 V DC IC -0.5 Collector current A Pulse ICP -1

 9.10. Size:258K  toshiba
 2sa2154ct-y 2sa2154ct-gr.pdf 

2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA2154CT General Purpose Amplifier Applications High voltage and high current V = -50V, I = -100mA (max) CEO C Unit mm Excellent h linearity FE h (I = -0.1 mA) / h (I = -2 mA)= 0.95 (typ.) FE C FE C High h h = 120 to 400 FE FE Complementary to 2SC6026CT Absolute Maximum Ratings

 9.11. Size:158K  toshiba
 2sa2121.pdf 

2SA2121 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2121 Power Amplifier Applications Unit mm Complementary to 2SC5949 Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO -200 V Collector-emitter voltage VCEO -200 V Emitter-base voltage VEBO -5 V Collector

 9.12. Size:145K  toshiba
 2sa2154.pdf 

2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154 General-Purpose Amplifier Applications Unit mm High voltage and high current VCEO = -50 V, IC = -100 mA (max) Excellent hFE linearity hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 120 400 1 Complementary to 2SC6026 3 2 0.8 0.05 0.1 0.05 1.0 0.05 Ab

 9.13. Size:254K  sanyo
 2sa2153.pdf 

Ordering number ENN8123 2SA2153 PNP Epitaxial Planar Silicon Transistor 2SA2153 High-Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of MBIT process. Low saturation voltage. High current capacity and wide ASO. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Con

 9.14. Size:33K  sanyo
 2sa2127.pdf 

Ordering number ENN8022 2SA2127 PNP Epitaxial Planar Silicon Transistor 2SA2127 High-Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of MBIT process. Low saturation voltage. High current capacity and wide ASO. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Co

 9.15. Size:97K  sanyo
 2sa2112.pdf 

Ordering number ENN7379 2SA2112 PNP Epitaxial Planar Silicon Transistors 2SA2112 High Current Switching Applications Applications Package Dimensions DC-DC converter, relay drivers, lamp drivers, unit mm motor drivers, strobes. 2064A [2SA2112] Features 2.5 1.45 Adoption of MBIT process. 6.9 1.0 Large current capacitance. Low collector-to-emitter saturation vo

 9.16. Size:384K  sanyo
 2sa2169-e 2sa2169-tl-e.pdf 

2SA2169/2SC6017 Ordering number EN8275A SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistor 2SA2169/2SC6017 High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching ( ) 2SA

 9.17. Size:91K  sanyo
 2sa2124.pdf 

Ordering number EN7920A 2SA2124 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2124 High-Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of MBIT processes. Low collector-to-emitter saturation voltage. High current capacity. High-speed switching. Spe

 9.18. Size:54K  sanyo
 2sa2126.pdf 

Ordering number ENN7990 2SA2126 PNP Epitaxial Planar Silicon Transistor 2SA2126 DC / DC Converter Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25

 9.19. Size:61K  sanyo
 2sa2169 2sc6017.pdf 

Ordering number ENN8275 2SA2169 / 2SC6017 PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching 2SA2169 / 2SC6017 Applications Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) 2SA2169 Abs

 9.20. Size:32K  sanyo
 2sa2186.pdf 

Ordering number ENA0269 2SA2186 PNP Epitaxial Planar Silicon Transistor 2SA2186 High-Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of MBIT processes. High current capacity. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Rat

 9.21. Size:59K  sanyo
 2sa2125 2sc5964.pdf 

Ordering number ENN7988 2SA2125 / 2SC5964 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2125 / 2SC5964 DC / DC Converter Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications

 9.22. Size:40K  sanyo
 2sa2117.pdf 

Ordering number ENN7906 2SA2117 / 2SC5934 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2117 / 2SC5934 High Current Switching Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers. unit mm 2041A Features [2SA2117 / 2SC5934] 4.5 Adoption of MBIT process. 10.0 2.8 High-speed switching. 3.2 Large current capacitance. Low

 9.23. Size:337K  sanyo
 2sa2126-e 2sa2126-tl-e.pdf 

2SA2126 Ordering number EN7990A SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications 2SA2126 Applications DC / DC converter, relay drivers, lamp drivers, motor drivers Features Adoption of MBIT processes High current capacitance Low collector-to-emitter saturation voltage High-speed switching Specifications

 9.24. Size:1677K  rohm
 2sa2030 2sa2018 2sa2119k.pdf 

2SA2030 / 2SA2018 / 2SA2119K Datasheet Low frequency transistor(-12V, -500mA) lOutline l Parameter Value SOT-723 SOT-416 VCEO -12V IC -500mA 2SA2030 2SA2018 (VMT3) (EMT3) lFeatures l SOT-346 1)High current. 2)Collector-Emitter saturation voltage is low. VCE(sat) 250mA at IC=-200mA/IB=-10

 9.25. Size:81K  rohm
 2sa2199.pdf 

2SA2199 Transistors General Purpose Transistor (-50V, -100mA) 2SA2199 Applications Dimensions (Unit mm) Small signal low frequency amplifier VMN3 Features 0.22 0.16 1) Excellent hFE linearity. (3) 2) Complements the 2SC6114. Structure (1) (2) PNP silicon epitaxial 0.37 0.17 0.35 planar transistor 0.6 (1) Base (2) Emitter Abbreviated symbol P (3) C

 9.26. Size:139K  rohm
 2sa2018 2sa2018 2sa2030 2sa2119k.pdf 

2SA2018 / 2SA2030 / 2SA2119K Transistors Low frequency transistor 2SA2018 / 2SA2030 / 2SA2119K The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Dimensions (Unit mm) Applications For switching, for muting. 2SA2018 Features 1) A collector current is large. 2) Collector saturation voltage is low. Each

 9.27. Size:44K  rohm
 2sa2113.pdf 

2SA2113 Transistor Medium power transistor (-30V, -2A) 2SA2113 External dimensions (Units mm) Features 1) High speed switching. (Tf Typ. 20ns at IC = -2A) 2.8 1.6 TSMT3 2) Low saturation voltage, typically (Typ. -200mV at IC = -1A, IB = -0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5916 (1)Base 0.3 0.6 Each

 9.28. Size:526K  onsemi
 2sa2186-an.pdf 

Ordering number ENA0269A 2SA2186 Bipolar Transistor http //onsemi.com -50V, -2A, Low VCE(sat), PNP Single NMP Applicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching Specifications Absolute Maximum Ratings at

 9.29. Size:201K  onsemi
 2sa2153.pdf 

Ordering number EN8123A 2SA2153 Bipolar Transistor http //onsemi.com -50V, -2A, Low VCE(sat), PNP Single PCP Applicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of MBIT process Low saturation voltage Large current capacity and wide ASO Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions R

 9.30. Size:403K  onsemi
 2sa2127-ae.pdf 

Ordering number EN8022A 2SA2127 Bipolar Transistor http //onsemi.com -50V, -2A, Low VCE(sat), PNP Single MP Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of MBIT process Low saturation voltage High current capacity and wide ASO Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions R

 9.31. Size:324K  onsemi
 2sa2124.pdf 

Ordering number EN7920B 2SA2124 Bipolar Transistor http //onsemi.com -30V, -2A, Low VCE(sat), PNP Single PCP Applicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of MBIT processes Low collector-to-emitter saturation voltage Large current capacity High-speed switching Specifications Absolute Maximum Ratings at T

 9.32. Size:376K  onsemi
 2sa2126.pdf 

Ordering number EN7990A 2SA2126 Bipolar Transistor http //onsemi.com -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers Features Adoption of MBIT processes High current capacitance Low collector-to-emitter saturation voltage High-speed switching Specifications Absolute Maximum Ratings at Ta

 9.33. Size:430K  onsemi
 2sa2169 2sc6017.pdf 

Ordering number EN8275A 2SA2169/2SC6017 Bipolar Transistor http //onsemi.com (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching ( ) 2SA2169 Specifications Absolute Maximum R

 9.34. Size:188K  onsemi
 2sa2125 2sa2125-td-h 2sc5964 2sc5964-td-h.pdf 

Ordering number EN7988B 2SA2125/2SC5964 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 50V, 3A, Low VCE sat , PNP NPN Single PCP Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features Adoption of MBIT process Large current capacity Low collector to emitter saturation voltage High-speed switching Halogen free

 9.35. Size:292K  onsemi
 2sa2126-h 2sa2126.pdf 

Ordering number EN7990A 2SA2126 Bipolar Transistor http //onsemi.com -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers Features Adoption of MBIT processes High current capacitance Low collector-to-emitter saturation voltage High-speed switching Specifications Absolute Maximum Ratings at Ta

 9.36. Size:519K  onsemi
 2sa2112-an.pdf 

Ordering number EN7379A 2SA2112 Bipolar Transistor http //onsemi.com -50V, -3A, Low VCE(sat), PNP Single NMP Applicaitons DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes Features Adoption of MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching Specifications Absolute Maximum Ratings at Ta=2

 9.37. Size:319K  onsemi
 2sa2125 2sc5964.pdf 

Ordering number EN7988B 2SA2125/2SC5964 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 50V, 3A, Low VCE sat , PNP NPN Single PCP Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features Adoption of MBIT process Large current capacity Low collector to emitter saturation voltage High-speed switching Halogen free

 9.38. Size:79K  panasonic
 2sa2140 2sc5993.pdf 

Product News Delivering high breakdown voltage plus high frequency characteristics. High-fT Transistors 2SA2140/2SC5993 Overview 2SA2140/2SC5993 high-fT transistors deliver a typical fT Unit mm value of 100MHz or higher at VCEO of 180V while featuring high-speed switching and low-saturation voltage characteristics. Making use of these transistors assists the production of power s

 9.39. Size:359K  panasonic
 2sa2122g.pdf 

This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SA2122G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5950G Package Features Code High forward current transfer ratio hFE Smini typ package, allowing downsizing of the equipment and automatic SMini3-F2 Marking symbol 7L insertion through the tape

 9.40. Size:421K  panasonic
 2sa2164.pdf 

Transistors 2SA2164 Silicon PNP epitaxial planar type For high-frequency amplification Unit mm 0.33+0.05 0.10+0.05 0.02 0.02 Features 3 High transfer ratio fT SSS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 0.23+0.05 1 2 0.02 (0.40)(0.40) 0.80 0.05 Absolute Maximum Ratings Ta = 25 C 1.

 9.41. Size:113K  isahaya
 2sa2166.pdf 

 9.42. Size:90K  isahaya
 2sa2167.pdf 

2SA2167 FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE Unit mm OUTLINE DRAWING DESCRIPTION 4.6MAX 2SA2167 is a silicon PNP epitaxial type transistor. 1.6 1.5 It is designed with high voltage, high Collector current, high Collector dissipation. C E B FEATURE 0.53 High voltage VCEO=-60V MAX 1.5 0.48MAX 0.4 High Collector current IC=-2A 3.0 Lo

 9.43. Size:122K  isahaya
 2sa2188.pdf 

 9.44. Size:206K  sanken-ele
 2sa2151a.pdf 

2-1 Transistors Specifications List by Part Number Absolute Maximum Ratings ICBO hFE VCBO VCEO Ic Pc Conditions Conditions Part Number Applications VCB VCE Ic (V) (V) (A) (W) ( A) min max (V) (V) (A) 2SA1186 Audio, general-purpose 150 150 10 100 100 150 50 180 4 3 2SA1215 Audio, general-purpose 160 160 15 150 100 160 50 180 4 5 2SA1216

 9.45. Size:1307K  kexin
 2sa2126.pdf 

SMD Type Transistors PNP Transistors 2SA2126 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features 4 Collector Current Capability IC=-3A Collector Emitter Voltage VCEO=-50V 0.127 High current capacitance. +0.1 0.80-0.1 max Low collector-to-emitter saturation voltage High-speed switching. + 0.1 1 Base 2.3 0.60-

 9.46. Size:107K  chenmko
 2sa2119gp.pdf 

CHENMKO ENTERPRISE CO.,LTD 2SA2119GP SURFACE MOUNT Low Ferquency PNP Transistor VOLTAGE 12 Volts CURRENT 0.5 Ampere APPLICATION * For switching,for muting. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * A collector current is large. * Collector saturation voltage is low. VCE(sat)

 9.47. Size:194K  chenmko
 2sa2119tgp.pdf 

 9.48. Size:502K  cn sptech
 2sa2198.pdf 

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA2198 DESCRIPTION Low Collector Saturation Voltage V = -0.5(V)(Max)@I = -5A CE(sat) C Good Linearity of h FE APPLICATIONS Designed for chopper regulator, switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -70 V CBO V Collector-E

 9.49. Size:221K  inchange semiconductor
 2sa2151.pdf 

isc Silicon PNP Power Transistor 2SA2151 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -200V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC6011 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

 9.50. Size:189K  inchange semiconductor
 2sa2120.pdf 

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2120 DESCRIPTION Recommended for audio frequency amplifier output stage Complementary to 2SC5948 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll

 9.51. Size:233K  inchange semiconductor
 2sa2126.pdf 

isc Silicon PNP Power Transistor 2SA2126 DESCRIPTION Large current capacitance High-speed switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS DC/DC converter,relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -50 V CB

 9.52. Size:219K  inchange semiconductor
 2sa2121.pdf 

isc Silicon PNP Power Transistor 2SA2121 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = -200V(Min) (BR)CEO Complement to Type 2SC5949 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommended for audio frequency amplifier output sta

 9.53. Size:233K  inchange semiconductor
 2sa2169.pdf 

isc Silicon PNP Power Transistor 2SA2169 DESCRIPTION Large current capacitance High-speed switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SC6017 APPLICATIONS relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag

 9.54. Size:214K  inchange semiconductor
 2sa2140.pdf 

isc Silicon PNP Power Transistor 2SA2140 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplification and for TV VM circuit. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

 9.55. Size:221K  inchange semiconductor
 2sa2151a.pdf 

isc Silicon PNP Power Transistor 2SA2151A DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC6011A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V