2SA986A - параметры, поиск аналогов, даташиты транзистора

Биполярный транзистор 2SA986A Даташит. Аналоги

   Наименование производителя: 2SA986A
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 10 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 180 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 180 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Статический коэффициент передачи тока (hfe): 70
   Корпус транзистора: TO-220

Аналог (замена) для 2SA986A

- подбор ⓘ биполярного транзистора по параметрам

2SA986A Datasheet (PDF)

..1. Size:65K wingshing
2sa986a.pdf pdf_icon

2SA986A PNP EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEO -180 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 10 W Junction Temperature Tj

9.1. Size:120K nec
2sa988.pdf pdf_icon

9.2. Size:42K no
2sa984.pdf pdf_icon

9.3. Size:39K no
2sa980.pdf pdf_icon

9.4. Size:70K wingshing
2sa985.pdf pdf_icon

2SA985 PNP EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SC2275ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base voltage VEBO -7 V Collector Current (DC) IC -1.5 A Collector Dissipation (Tc=25 PC 25 W

9.5. Size:160K jmnic
2sa985 2sa985a.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA985 2SA985A DESCRIPTION With TO-220 package Complement to type 2SC2275/2275A High breakdown voltage APPLICATIONS For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3

9.6. Size:151K jmnic
2sa980 2sa981 2sa982.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA980/981/982 DESCRIPTION With TO-3 package Complement to type 2SC2260/2261/2262 APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CO

9.7. Size:207K inchange semiconductor
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isc Silicon PNP Power Transistor 2SA985DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2275Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsHigh frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS

9.8. Size:194K inchange semiconductor
2sa981.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA981DESCRIPTIONHigh Power Dissipation-: P = 80W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOComplement to Type 2SC2261Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS

9.9. Size:131K inchange semiconductor
2sa980 2sa981 2sa982.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA980/981/982 DESCRIPTION With TO-3 package Complement to type 2SC2260/2261/2262 APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SY

9.10. Size:91K inchange semiconductor
2sa985-a.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA985 2SA985A DESCRIPTION With TO-220 package Complement to type 2SC2275/2275A High breakdown voltage APPLICATIONS For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-22

9.11. Size:194K inchange semiconductor
2sa982.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA982DESCRIPTIONHigh Power Dissipation-: P = 80W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -140V(Min.)(BR)CEOComplement to Type 2SC2262Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS

9.12. Size:194K inchange semiconductor
2sa980.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA980DESCRIPTIONHigh Power Dissipation-: P = 80W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -100V(Min.)(BR)CEOComplement to Type 2SC2260Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS

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