Биполярный транзистор 2SB1493 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB1493
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 70 W
Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 140 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 7 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 20 MHz
Статический коэффициент передачи тока (hfe): 5000
Корпус транзистора: TOP-3 SC-65
2SB1493 Datasheet (PDF)
2sb1493.pdf
Power Transistors2SB1493Silicon PNP epitaxial planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SD225515.0 0.5 4.5 0.213.0 0.510.5 0.5 2.0 0.1FeaturesOptimum for 60W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000 3.2 0.1Low collector to emitter saturation voltage VCE(sat):
2sb1490.pdf
Power Transistors2SB1490Silicon PNP epitaxial planar type darlingtonUnit: mm20.00.5 5.00.3For power amplification(3.0)Complementary to 2SD2250 3.30.2 Features Optimum for 80 W HiFi output(1.5) High forward current transfer ratio hFE(1.5) Low collector-emitter saturation voltage VCE(sat) 2.00.32.70.33.00.31.00.20.60.2 Absolute
2sb1492 2sd2254 2sd2254.pdf
Power Transistors2SD2254Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm 3.3 0.2Complementary to 2SB149220.0 0.5 5.0 0.33.0FeaturesOptimum for 60W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):
2sb1494.pdf
2SB1494Silicon PNP Triple DiffusedApplicationLow frequency power amplifier complementary Pair with 2SD2256OutlineTO-3P211. BaseID2. Collector(Flange)3. Emitter13232SB1494Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7 VCol
2sb1492.pdf
isc Silicon PNP Darlington Power Transistor 2SB1492DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -5AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -5ACE(sat) CComplement to Type 2SD2254Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Optimum for 60W HiFi
2sb1490.pdf
isc Silicon PNP Darlington Power Transistor 2SB1490DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -6AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -6ACE(sat) CComplement to Type 2SD2250Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsOptimum for 80W HiFi o
2sb1495.pdf
isc Silicon PNP Darlington Power Transistor 2SB1495DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ (V = -2V, I = -2A)FE CE CLow-Collector Saturation Voltage-: V = -1.5V(Max.)@I = -1.5ACE(sat) CComplement to Type 2SD2257Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power switching applications.A
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SB1562
