Power Transistors2SB1643Silicon PNP epitaxial planar typeUnit: mm8.5 0.2 3.4 0.3For power amplification6.0 0.5 1.0 0.1Features1.5max. 1.1max.High collector to emitter VCEOHigh collector power dissipation PC0.8 0.1 0.5max.N type package enabling direct soldering of the radiating fin to2.54 0.3the printed circuit board, etc. of small electronic equipment.

SMD Type TransistorsPNP Transistors2SB1643TO-252Unit: mm+0.156.50-0.15+0.1 Features2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High collector to emitter VCEO High collector power dissipation PC0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

2SB1644TransistorsPower Transistor (-80V, -4A)2SB1644 Features External dimensions (Units : mm)1) Low saturation voltage.13.13.2(Typ. VCE(sat) = -0.5V at IC / IB = -3A / -0.3A)2) Excellent DC current gain characteristics.8.8 Absolute maximum ratings (Ta = 25C)Parameter Symbol Limits UnitCollector-base voltageVCBO -80 VCollector-emitter voltageVCEO -80 V0.5Min

2SB1644JFRA2SB1644JDatasheetPNP -4A -80V Power TransistorAEC-Q101 QualifiedOutline LPT(S) (D2-PAK)Parameter ValueCollectorVCEO80VIC4ABaseEmitter2SB1644J2SB1644JFRAFeatures(SC-83)1) Suitable for Power Driver2) Low VCE(sat)VCE(sat)= 1.5V(Max.) (IC/IB= 3A/ 300mA)3) Lead Free/RoHS Compliant.Inner circuitCollectorApplicatio

2SB1644JDatasheetPNP -4A -80V Power TransistorOutline LPT(S) (D2-PAK)Parameter ValueCollectorVCEO80VIC4ABaseEmitter2SB1644JFeatures(SC-83)1) Suitable for Power Driver2) Low VCE(sat)VCE(sat)= 1.5V(Max.) (IC/IB= 3A/ 300mA)3) Lead Free/RoHS Compliant.Inner circuitCollectorApplicationsAutomotive power driver , LED driver Bas

Power Transistors2SB1645Silicon PNP triple diffusion planar type DarlingtonUnit: mmFor power amplification15.50.5 3.00.3 3.20.155 Features Satisfactory forward current transfer ratio hFE characteristics Wide area of safe operation (ASO)55 Optimum for the output stage of a HiFi audio amplifier(4.0)52.00.21.10.1 Absolute Maximum

JMnic Product Specification Silicon PNP Power Transistors 2SB1640 DESCRIPTION With ITO-220 package Low collector saturation voltage Complement to type 2SD2525 APPLICATIONS Audio frequency power amplifier PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITI

JMnic Product Specification Silicon PNP Power Transistors 2SB1642 DESCRIPTION With TO-220F package Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2.5A,IB=-0.25A Collector power dissipation: PC=25W(TC=25) APPLICATIONS Audio frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-220F) and

JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1647 DESCRIPTION With TO-3PN package Complement to type 2SD2560 APPLICATIONS Audio ,regulator and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER

E(70)BDarlington 2SB1648Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561)Application : Audio, Series Regulator and General Purpose(Ta=25C) External Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical CharacteristicsSymbol Ratings Unit Symbol Conditions Ratings Unit0.26.00.336.4VCBO 150 V ICBO VCB=150

E(70)BDarlington 2SB1647Equivalent circuit CSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2560)Application : Audio, Series Regulator and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Ratings UnitConditions0.24.80.415.6VCBO 150 V VCB=15

E(70)BDarlington 2SB1649Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561)Application : Audio, Series Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Conditions RatingsSymbol Ratings Unit Unit0.20.2 5.515.6ICBOVCBO 150 V VCB

isc Silicon PNP Power Transistor 2SB1640DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector to Emitter Saturation Voltage: V = -1.5V(Max.)@I = -2ACE(sat) CComplement to Type 2SD2525Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and gene

isc Silicon PNP Power Transistor 2SB1642DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOCollector Power Dissipation-: P = 25 W@ T = 25C CLow Collector Saturation Voltage-: V = -1.5V(Max)@ (I = -2.5A, I = -0.25A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio f

isc Silicon PNP Darlington Power Transistor 2SB1647DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = -10A, V = -4V)FE C CELow Collector Saturation Voltage-: V = -2.5V(Max)@ (I = -10A, I = -10mA)CE(sat) C BComplement to Type 2SD2560Minimum Lot-to-Lot variations for robust deviceperformance and re

isc Silicon PNP Darlington Power Transistor 2SB1649DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -10ACE(sat) CComplement to Type 2SD2561Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio,series regulator and general pu