2SB1645 datasheet, аналоги, основные параметры
Наименование производителя: 2SB1645 📄📄
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 100 W
Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 20 MHz
Статический коэффициент передачи тока (hFE): 3500
Корпус транзистора: TOP-3E
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Аналоги (замена) для 2SB1645
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2SB1645 даташит
..1. Size:54K panasonic
2sb1645.pdf 
Power Transistors 2SB1645 Silicon PNP triple diffusion planar type Darlington Unit mm For power amplification 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features Satisfactory forward current transfer ratio hFE characteristics Wide area of safe operation (ASO) 5 5 Optimum for the output stage of a HiFi audio amplifier (4.0) 5 2.0 0.2 1.1 0.1 Absolute Maximum
8.4. Size:48K rohm
2sb1644.pdf 
2SB1644 Transistors Power Transistor (-80V, -4A) 2SB1644 Features External dimensions (Units mm) 1) Low saturation voltage. 13.1 3.2 (Typ. VCE(sat) = -0.5V at IC / IB = -3A / -0.3A) 2) Excellent DC current gain characteristics. 8.8 Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V 0.5Min
8.5. Size:1165K rohm
2sb1644jfra.pdf 
2SB1644JFRA 2SB1644J Datasheet PNP -4A -80V Power Transistor AEC-Q101 Qualified Outline LPT(S) (D2-PAK) Parameter Value Collector VCEO 80V IC 4A Base Emitter 2SB1644J 2SB1644JFRA Features (SC-83) 1) Suitable for Power Driver 2) Low VCE(sat) VCE(sat)= 1.5V(Max.) (IC/IB= 3A/ 300mA) 3) Lead Free/RoHS Compliant. Inner circuit Collector Applicatio
8.6. Size:260K rohm
2sb1644j.pdf 
2SB1644J Datasheet PNP -4A -80V Power Transistor Outline LPT(S) (D2-PAK) Parameter Value Collector VCEO 80V IC 4A Base Emitter 2SB1644J Features (SC-83) 1) Suitable for Power Driver 2) Low VCE(sat) VCE(sat)= 1.5V(Max.) (IC/IB= 3A/ 300mA) 3) Lead Free/RoHS Compliant. Inner circuit Collector Applications Automotive power driver , LED driver Bas
8.7. Size:56K panasonic
2sb1643.pdf 
Power Transistors 2SB1643 Silicon PNP epitaxial planar type Unit mm 8.5 0.2 3.4 0.3 For power amplification 6.0 0.5 1.0 0.1 Features 1.5max. 1.1max. High collector to emitter VCEO High collector power dissipation PC 0.8 0.1 0.5max. N type package enabling direct soldering of the radiating fin to 2.54 0.3 the printed circuit board, etc. of small electronic equipment.
8.8. Size:147K jmnic
2sb1640.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB1640 DESCRIPTION With ITO-220 package Low collector saturation voltage Complement to type 2SD2525 APPLICATIONS Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITI
8.9. Size:194K jmnic
2sb1642.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB1642 DESCRIPTION With TO-220F package Low collector saturation voltage VCE(SAT)=-1.5V(Max) at IC=-2.5A,IB=-0.25A Collector power dissipation PC=25W(TC=25 ) APPLICATIONS Audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-220F) and
8.10. Size:160K jmnic
2sb1647.pdf 
JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1647 DESCRIPTION With TO-3PN package Complement to type 2SD2560 APPLICATIONS Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER
8.11. Size:29K sanken-ele
2sb1648.pdf 
E (70 ) B Darlington 2SB1648 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Application Audio, Series Regulator and General Purpose (Ta=25 C) External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Electrical Characteristics Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 6.0 0.3 36.4 VCBO 150 V ICBO VCB= 150
8.12. Size:29K sanken-ele
2sb1647.pdf 
E (70 ) B Darlington 2SB1647 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2560) Application Audio, Series Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Ratings Unit Conditions 0.2 4.8 0.4 15.6 VCBO 150 V VCB= 15
8.13. Size:30K sanken-ele
2sb1649.pdf 
E (70 ) B Darlington 2SB1649 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Application Audio, Series Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Conditions Ratings Symbol Ratings Unit Unit 0.2 0.2 5.5 15.6 ICBO VCBO 150 V VCB
8.14. Size:1128K kexin
2sb1643.pdf 
SMD Type Transistors PNP Transistors 2SB1643 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 High collector to emitter VCEO High collector power dissipation PC 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit
8.15. Size:207K inchange semiconductor
2sb1640.pdf 
isc Silicon PNP Power Transistor 2SB1640 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Low Collector to Emitter Saturation Voltage V = -1.5V(Max.)@I = -2A CE(sat) C Complement to Type 2SD2525 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and gene
8.16. Size:210K inchange semiconductor
2sb1642.pdf 
isc Silicon PNP Power Transistor 2SB1642 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Collector Power Dissipation- P = 25 W@ T = 25 C C Low Collector Saturation Voltage- V = -1.5V(Max)@ (I = -2.5A, I = -0.25A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio f
8.17. Size:239K inchange semiconductor
2sb1647.pdf 
isc Silicon PNP Darlington Power Transistor 2SB1647 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = -10A, V = -4V) FE C CE Low Collector Saturation Voltage- V = -2.5V(Max)@ (I = -10A, I = -10mA) CE(sat) C B Complement to Type 2SD2560 Minimum Lot-to-Lot variations for robust device performance and re
8.18. Size:221K inchange semiconductor
2sb1649.pdf 
isc Silicon PNP Darlington Power Transistor 2SB1649 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -10A CE(sat) C Complement to Type 2SD2561 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio,series regulator and general pu
Другие транзисторы: 2SB1612, 2SB1623, 2SB1623A, 2SB1629, 2SB1631, 2SB1638, 2SB1638A, 2SB1643, BD222, 2SB1653, 2SB1667, 2SB1678, 2SB1679, 2SB1688, 2SB1693, 2SB1699, 2SB1713
