2SD1381F - Даташиты. Аналоги. Основные параметры

2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F Transistors Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F Features External dimensions (Units mm) 1) High VCEO, VCEO=80V 2SD1898 2) High IC, IC=1A (DC) 4.5+0.2 -0.1 3) Good hFE linearity 1.5+0.2 1.6 0.1 -0.1 4) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 0.4+0.1 -0.05 2SB1241 / 2SB

2SB852K / 2SA830S Transistors Transistors 2SD1383K / 2SC1645S (96-118-B20) (96-205-D20) 280 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document a

2SD1383K Datasheet High-gain Amplifer Transistor (32V, 0.3A) lOutline l SOT-346 Parameter Value SC-59 VCES 32V IC 0.3A R 4k SMT3 lFeatures lInner circuit l l 1)Darlington connection for high DC current gain. 2)Built-in 4k resistor between base and emitter. 3)Complements the 2SB852K. lApplication l HIGH GAIN AMPLIFIER

Transistor 2SD1385 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). 0.85 M type package allowing easy automatic and manual

Transistor 2SD1385 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). 0.85 M type package allowing easy automatic and manual

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1386 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = 4A FE C Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and

isc Silicon NPN Power Transistor 2SD1380 DESCRIPTION High Collector Current -I = 2A C Collector-Emitter Breakdown Voltage- V = 32V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SB1009 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier application