2N6299 - Даташиты. Аналоги. Основные параметры

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6298 2N6299 DESCRIPTION With TO-66 package DARLINGTON Low collector saturation voltage Complement to type 2N6300/6301 APPLICATIONS General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outlin

PNP Darlington Power Silicon Transistor 2N6298 & 2N6299 Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/540 TO-66 (TO-213AA) Package Maximum Ratings Ratings Symbol 2N6298 2N6299 Units Collector - Emitter Voltage VCEO 60 80 Vdc Collector - Base Voltage VCBO 60 80 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Base Current IB 120 mAdc Collector Current IC 8.0 Adc Tot

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6298 2N6299 DESCRIPTION With TO-66 package DARLINGTON Low collector saturation voltage Complement to type 2N6300/6301 APPLICATIONS General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (T

2N6299SMD 2N6299SMD05 2N6301SMD 2N6301SMD05 MECHANICAL DATA Dimensions in mm (inches) COMPLEMENTARY SILICON POWER TRANSISTORS 2N6299SMD - PNP TRANSISTOR 2N6301SMD - NPN TRANSISTOR Designed for general

Order this document MOTOROLA by 2N6107/D SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 (See 2N6050) Complementary Silicon Plastic PNP Power Transistors 2N6107 . . . designed for use in general purpose amplifier and switching applications. 2N6109* DC Current Gain Specified to 7.0 Amperes hFE = 30 150 @ IC = 3.0 Adc 2N6111, 2N6288 hFE = 2.3 (Min) @ IC = 7.0 Adc All

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. www.onsemi.com Features 7 AMPERE High DC Current Gain High Current Gain - Bandwidth Product POWER TRANSISTORS TO-220 Compact Package COMPLEMENTARY SILICON These Devices are Pb-

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. www.onsemi.com Features 7 AMPERE High DC Current Gain High Current Gain - Bandwidth Product POWER TRANSISTORS TO-220 Compact Package COMPLEMENTARY SILICON These Devices are Pb-

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. www.onsemi.com Features 7 AMPERE High DC Current Gain High Current Gain - Bandwidth Product POWER TRANSISTORS TO-220 Compact Package COMPLEMENTARY SILICON These Devices are Pb-

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. www.onsemi.com Features 7 AMPERE High DC Current Gain High Current Gain - Bandwidth Product POWER TRANSISTORS TO-220 Compact Package COMPLEMENTARY SILICON These Devices are Pb-

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS 2N6107 PNP 2N6292 NPN TO-220 Plastic Package General Purpose Amplifier and Switching Applications ABSOLUTE MAXIMUM RATINGS (Ta=25 C) DESCRIPTION SYMBOL VALUE UNIT VCBO Collector Base Voltage 80 V Collector Emitter Voltage VCEO 70 V Collector Emitter Voltage (RBE= 100

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6290 2N6290 NPN PLASTIC POWER TRANSISTOR Complementary 2N6109 Medium Power Switching and Linear Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. B E F A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D0.90 E 1.15 1.40

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6294 2N6295 DESCRIPTION With TO-66 package DARLINGTON Complement to type 2N6296/6297 APPLICATIONS For high gain amplifier and medium speed switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum rating

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6296 2N6297 DESCRIPTION With TO-66 package DARLINGTON Complement to type 2N6294/6295 APPLICATIONS For high gain amplifier and medium speed switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6291 2N6293 DESCRIPTION With TO-220 package Low collector saturation voltage Wide safe operating area APPLICATIONS For medium power switching and amplifier applications such as series and shunt regulators and driver and output stages of high-fidelity amplifiers PINNING PIN DESCRIPTION 1 Base C

isc Silicon NPN Power Transistor 2N6290 DESCRIPTION DC Current Gain- h = 30-150@ I = 2.5A FE C Collector-Emitter Sustaining Voltage- V = 50V(Min) CEO(SUS) Complement to Type 2N6109 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RA

isc Product Specification isc Silicon NPN Power Transistor 2N6292 DESCRIPTION DC Current Gain- h = 30-150@ I = 2A FE C Collector-Emitter Sustaining Voltage- V = 70V(Min) CEO(SUS) Complement to Type 2N6107 APPLICATIONS Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-B

isc Silicon NPN Power Transistor 2N6293 DESCRIPTION DC Current Gain- h = 30-150@ I = 2A FE C Collector-Emitter Sustaining Voltage- V = 70V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6288 2N6290 2N6292 DESCRIPTION With TO-220 package Complement to PNP type 2N6107; 2N6109 ;2N6111 APPLICATIONS Power amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYM

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6294 2N6295 DESCRIPTION With TO-66 package DARLINGTON Complement to type 2N6296/6297 APPLICATIONS For high gain amplifier and medium speed switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximu

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6296 2N6297 DESCRIPTION With TO-66 package DARLINGTON Complement to type 2N6294/6295 APPLICATIONS For high gain amplifier and medium speed switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximu

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6291 2N6293 DESCRIPTION With TO-220 package Low collector saturation voltage Wide safe operating area APPLICATIONS For medium power switching and amplifier applications such as series and shunt regulators and driver and output stages of high-fidelity amplifiers PINNING PIN DESCRIPTION 1

isc Silicon NPN Power Transistor 2N6291 DESCRIPTION DC Current Gain- h = 30-150@ I = 2.5A FE C Collector-Emitter Sustaining Voltage- V = 50V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA