Power Transistors2SD2420Silicon NPN triple diffusion planer type DarlingtonUnit: mmFor power amplification 4.60.29.90.32.90.2 Features 3.20.1 High forward current transfer ratio hFE: 2 000 to 10 000 Dielectric breakdown voltage of the package: > 5 kV1.40.22.60.11.60.2 Absolute Maximum Ratings TC = 25C0.80.1 0.550.15Parameter Symbol Rati

Ordering number:EN4716NPN Epitaxial Planar Silicon Transistor2SD242680V/2A Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2084B[2SD2426]4.5Features1.9 2.610.51.2 1.4 Darlington connection. High DC current gain.1.20.51.60.51 2 31 : Emitter2 : Collector

DATA SHEETSILICON TRANSISTOR2SD2425NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGThe 2SD2425 is a transistor featuring high current PACKAGE DRAWING (UNIT: mm)capacitance in small dimension. This transistor is ideal forDC/DC converters and motor drivers.FEATURES New package with dimensions in between those of smallsignal and powe

2SD2423Silicon NPN Epitaxial, DarlingtonApplicationLow frequency power amplifierFeaturesThe transistor with a built-in zener diode of surge absorb.OutlineUPAK2, 41231ID41. Base2. Collector2 k 0.5 3. Emitter(Typ) (Typ)4. Collector (Flange)32SD2423Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 50

SMD Type TransistorsNPN Transistors2SD2423SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.5AC Collector Emitter Voltage VCEO=50V0.42 0.10.46 0.1BID1.Base2 k 0.5 2.Collector(Typ) (Typ)E 3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Volt

SMD Type TransistorsNPN Transistors2SD2425SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=5A Collector Emitter Voltage VCEO=60V Complementary to 2SB15780.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 V

isc Silicon NPN Darlington Power Transistor 2SD2422DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max.) @I = 3ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 2A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switch