2SD2420 Specs and Replacement
Type Designator: 2SD2420
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: TO-220D
2SD2420 Substitution
- BJT ⓘ Cross-Reference Search
2SD2420 datasheet
Power Transistors 2SD2420 Silicon NPN triple diffusion planer type Darlington Unit mm For power amplification 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High forward current transfer ratio hFE 2 000 to 10 000 Dielectric breakdown voltage of the package > 5 kV 1.4 0.2 2.6 0.1 1.6 0.2 Absolute Maximum Ratings TC = 25 C 0.8 0.1 0.55 0.15 Parameter Symbol Rati... See More ⇒
Ordering number EN4716 NPN Epitaxial Planar Silicon Transistor 2SD2426 80V/2A Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2084B [2SD2426] 4.5 Features 1.9 2.6 10.5 1.2 1.4 Darlington connection. High DC current gain. 1.2 0.5 1.6 0.5 1 2 3 1 Emitter 2 Collector ... See More ⇒
DATA SHEET SILICON TRANSISTOR 2SD2425 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2425 is a transistor featuring high current PACKAGE DRAWING (UNIT mm) capacitance in small dimension. This transistor is ideal for DC/DC converters and motor drivers. FEATURES New package with dimensions in between those of small signal and powe... See More ⇒
Detailed specifications: 2SD2359, 2SD2375, 2SD2382, 2SD2383, 2SD2396, 2SD2403, 2SD2414, 2SD2416, TIP2955, 2SD2423, 2SD2425, 2SD2426, 2SD2441, 2SD2444, 2SD2453, 2SD2457, 2SD2459
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