Справочник транзисторов. 2N6307

 

Биполярный транзистор 2N6307 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2N6307

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 125 W

Макcимально допустимое напряжение коллектор-база (Ucb): 600 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V

Макcимальный постоянный ток коллектора (Ic): 8 A

Предельная температура PN-перехода (Tj): 200 °C

Граничная частота коэффициента передачи тока (ft): 5 MHz

Ёмкость коллекторного перехода (Cc): 250 pf

Статический коэффициент передачи тока (hfe): 15

Корпус транзистора: TO3

Аналоги (замена) для 2N6307

 

 

2N6307 Datasheet (PDF)

1.1. 2n6306 2n6307 2n6308.pdf Size:62K _central

2N6307

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.2. 2n6307.pdf Size:128K _inchange_semiconductor

2N6307
2N6307

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6307 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·High power dissipation APPLICATIONS ·Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified

 5.1. 2n6306 2n6308.pdf Size:278K _update

2N6307
2N6307

The documentation and process conversion INCH-POUND measures necessary to comply with this revision shall MIL-PRF-19500/498E be completed by 12 August 20005. 12 May 2005 SUPERSEDING MIL-PRF-19500/498D 30 April 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6306, 2N6306T1, 2N6306T3, 2N6308, 2N6308T1, 2N6308T3, JAN, J

5.2. 2n6301smd 2n6301smd05.pdf Size:25K _upd

2N6307
2N6307

2N6299SMD 2N6299SMD05 2N6301SMD 2N6301SMD05 MECHANICAL DATA Dimensions in mm (inches) COMPLEMENTARY SILICON POWER TRANSISTORS 2N6299SMD - PNP TRANSISTOR 2N6301SMD - NPN TRANSISTOR Designed for general

 5.3. 2n6301smd.pdf Size:25K _upd

2N6307
2N6307

2N6299SMD 2N6299SMD05 2N6301SMD 2N6301SMD05 MECHANICAL DATA Dimensions in mm (inches) COMPLEMENTARY SILICON POWER TRANSISTORS 2N6299SMD - PNP TRANSISTOR 2N6301SMD - NPN TRANSISTOR Designed for general

5.4. 2n6301smd05.pdf Size:25K _upd

2N6307
2N6307

2N6299SMD 2N6299SMD05 2N6301SMD 2N6301SMD05 MECHANICAL DATA Dimensions in mm (inches) COMPLEMENTARY SILICON POWER TRANSISTORS 2N6299SMD - PNP TRANSISTOR 2N6301SMD - NPN TRANSISTOR Designed for general

 5.5. 2n6298-99 2n6300-01.pdf Size:177K _mospec

2N6307
2N6307

A A A A

5.6. 2n6302.pdf Size:11K _semelab

2N6307

2N6302 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 120V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 16A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

5.7. 2n6304.pdf Size:86K _microsemi

2N6307
2N6307

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N6304 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon RF NPN, TO-72, UHF general purpose Low Noise Transistor Noise Figure = 5.0 dB (typ) @ f = 450 MHz High FT - 1.4 GHz (min) @ IC = 10 mAdc 2 1. Emitter 2. Base 1 3 Maximum Available Gain = 14 dB (min) @ f = 500 MHz

5.8. 2n6306 2n6308.pdf Size:54K _microsemi

2N6307
2N6307

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/498 Devices Qualified Level JAN 2N6306 2N6308 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6306 2N6308 Units Collector-Emitter Voltage 250 350 Vdc VCEO Collector-Base Voltage 500 700 Vdc VCBO Emitter-Base Voltage 8.0 Vdc VEBO Collector Current 8.0 Adc IC Base Current 4.0 Adc IB Total Powe

5.9. 2n6303.pdf Size:56K _microsemi

2N6307
2N6307

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N6303 APPLICATIONS: High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES: Silicon PNP Power Collector-Emitter Sustaining Voltage: VCEO(sus) = - 80 Vdc (Min) Transistors DC Current Gain: hFE = 30-150 @ IC = 1.5 Adc Low Collector-Emitter Saturat

5.10. 2n6306.pdf Size:128K _inchange_semiconductor

2N6307
2N6307

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6306 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·High power dissipation APPLICATIONS ·Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified

5.11. 2n6308.pdf Size:128K _inchange_semiconductor

2N6307
2N6307

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6308 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·High power dissipation APPLICATIONS ·Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified

5.12. 2n6300 2n6301.pdf Size:131K _inchange_semiconductor

2N6307
2N6307

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6300 2N6301 DESCRIPTION ·With TO-66 package ·DARLINGTON ·Low collector saturation voltage ·Complement to type 2N6298/6299 APPLICATIONS ·General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-6

5.13. 2n6302.pdf Size:130K _inchange_semiconductor

2N6307
2N6307

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6302 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain @IC=8A APPLICATIONS ·Designed for use in high power audio amplifier applications and high voltage switching regulator circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified out

5.14. 2n6300 2n6301.pdf Size:184K _aeroflex

2N6307
2N6307

NPN Darlington Power Silicon Transistor 2N6300 & 2N6301 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/539 • TO-66 (TO-213AA) Package Maximum Ratings Ratings Symbol 2N6300 2N6301 Units Collector - Emitter Voltage VCEO 60 80 Vdc Collector - Base Voltage VCBO 60 80 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Base Current IB 120 mAdc Collector Current IC 8.0 Adc Tot

Другие транзисторы... 2N630 , 2N6300 , 2N6301 , 2N6302 , 2N6303 , 2N6304 , 2N6305 , 2N6306 , SS8550 , 2N6307M , 2N6308 , 2N6308M , 2N6309 , 2N631 , 2N6310 , 2N6311 , 2N6312 .

 

 
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