FJV4105R - Даташиты. Аналоги. Основные параметры

FJV4105R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=4.7K , R2=10K ) Complement to FJV3105R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R75 B R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise not

FJV4109R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=4.7K ) Complement to FJV3109R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R79 R B PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parame

FJV4107R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=22K , R2=47K ) Complement to FJV3107R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R77 B R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise note

FJV4103R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=22K , R2=22K ) Complement to FJV3103R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B R73 R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted

FJV4106R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=10K , R2=47K ) Complement to FJV3106R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R76 B R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise note

FJV4108R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=47K , R2=22K ) Complement to FJV3108R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B R78 R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise note

FJV4102R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=10K , R2=10K ) Complement to FJV3102R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B R72 R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted

FJV4104R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=47K , R2=47K ) Complement to FJV3104R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B R74 R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise note

FJV4101R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=4.7K , R2=4.7K ) Complement to FJV3101R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B R71 R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise no