KSC2330A datasheet и подбор замены

 ..1. Size:38K  fairchild semi
 ksc2330a.pdf 

KSC2330A Color TV Chroma Output Collector-Base Voltage VCBO=400V Current Gain Bandwidth Product fT=50MHz (TYP.) TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7

 ..2. Size:50K  samsung
 ksc2330a.pdf 

KSC2330A NPN EPITAXIAL SILICON TRANSISTOR COLOR TV CHROMA OUTPUT TO-92L Collector-Base Voltage VCBO=400V Current Gain-Bandwidth Product fT=50Mhz (TYP) ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current IC 100 mA Collector Dissipation PC 1

 7.1. Size:37K  fairchild semi
 ksc2330.pdf 

KSC2330 Color TV Chroma Output Collector-Base Voltage VCBO=300V Current Gain Bandwidth Product fT=50MHz (TYP.) TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7

 7.2. Size:50K  samsung
 ksc2330.pdf 

KSC2330 NPN EPITAXIAL SILICON TRANSISTOR COLOR TV CHROMA OUTPUT TO-92L Collector-Base Voltage VCBO=300V Current Gain-Bandwidth Product fT=50Mhz (TYP) ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 7 V Collector Current IC 100 mA Collector Dissipation PC 1 mW

 8.1. Size:40K  fairchild semi
 ksc2331.pdf 

KSC2331 Low Frequency Amplifier & Medium Speed Switching Complement to KSA931 High Collector-Base Voltage VCBO=80V Collector Current IC=700mA Collector Dissipation PC=1W TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage

 8.2. Size:52K  fairchild semi
 ksc2335.pdf 

KSC2335 High Speed, High Voltage Switching Industrial Use TO-220 1 NPN Epitaxial Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 500 V V CEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 7 A ICP *Collector Current (Puls

 8.3. Size:49K  fairchild semi
 ksc2334.pdf 

KSC2334 High Speed Switching Industrial Use Complement to KSA1010 TO-220 1 NPN Epitaxial Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 7 A ICP *Collector Current

 8.4. Size:56K  fairchild semi
 ksc2333.pdf 

KSC2333 High Speed Switching Application Low Collector Saturation Voltage Specified of Reverse Biased SOA With Inductive Load TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base

 8.5. Size:64K  samsung
 ksc2331.pdf 

KSC2331 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER TO-92L MEDIUM SPEED SWITCHING Complement to KSA931 High Collector-Base Voltage VCBO=80V Collector Current IC=700mA Collector Dissipation PC=1W ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VE

 8.6. Size:230K  onsemi
 ksc2334.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.7. Size:196K  lge
 ksc2331.pdf 

KSC2331 TO-92MOD Transistor (NPN) TO-92MOD 1.EMITTER 1 2.COLLECTOR 2 3 3.BASE Features 5.800 6.200 Complement to KSA931 8.400 High collector-Base Voltage VCBO=80V 8.800 Collector current IC=700mA 0.900 1.100 Collector dissipation P =1W C 0.400 0.600 MAXIMUM RATINGS (TA=25 unless otherwise noted) 13.800 14.200 Symbol Parameter Value Units VCBO C

 8.8. Size:203K  lge
 ksc2331 to-92l.pdf 

KSC2331 TO-92L Transistor (NPN) TO-92L 1.EMITTER 2.COLLECTOR 4.700 5.100 3.BASE 2 3 1 Features 7.800 8.200 Complement to KSA931 High collector-Base Voltage VCBO=80V 0.600 0.800 Collector current IC=700mA Collector dissipation PC=1W 0.350 0.550 13.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) 14.200 Symbol Parameter Value Units VCBO Col

 8.9. Size:158K  inchange semiconductor
 ksc2334.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors KSC2334 DESCRIPTION With TO-220 package Complement to type KSA1010 Low collector saturation voltage Fast switching speed APPLICATIONS Switching regulators DC/DC converters High frequency power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3