November 2006MMBT4401KtmNPN Epitaxial Silicon TransistorSwitching TransistorMarking32XK2SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 40 VVEBO Emitter-Base Voltage 6 VIC Collector Current 600 mAPC Collector Dissipation 3

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT4401LT1/DSwitching TransistorMMBT4401LT1NPN SiliconMotorola Preferred DeviceCOLLECTOR31BASE32EMITTER1MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCEO 40 VdcCASE 31808, STYLE 6SOT23 (TO236AB)CollectorBase Voltage VCBO 60 VdcEmitterBase Voltage VEBO 6.

2N4401 MMBT4401CEC TO-92BSOT-23BEMark: 2XNPN General Pupose AmplifierThis device is designed for use as a medium power amplifier andswitch requiring collector currents up to 500 mA.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Voltage 6.0

MMBT4401 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Ideal for Medium Power Amplification and Switching Case material: molded Plastic Green Compound UL Flammability Rating 94V-0 Complementary PNP Type: MMBT4403 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Moisture Sensiti

MMBT4401T NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Type Available (MMBT4403T) CDim Min Max Typ Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) A 0.15 0.30 0.22TOP VIEW B CB 0.75 0.85 0.80B EMechanical Data C 1.45 1.75 1.60G Case: SOT-523 D 0.50

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMBT4401Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Surface Mount SOT-23 Package Capable of 350mWatts of Power DissipationNPN General Operating and Storage Junction Temperatures: -55 to 150 Purpose Amplifier IC=600mA Marking:2X/M4A Lead Fre

MMBT4401M3T5GNPN Switching TransistorThe MMBT4401M3T5G device is a spin-off of our popularSOT-23 three-leaded device. It is designed for general purposeswitching applications and is housed in the SOT-723 surface mountpackage. This device is ideal for low-power surface mountapplications where board space is at a premium.http://onsemi.comFeatures Reduces Board SpaceCOLLECTO

MMBT4401LT1GSwitching TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comhttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60 Vdc2EMITTEREmitter-Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 6

MMBT4401L, SMMBT4401LSwitching TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comhttp://onsemi.comCompliantCOLLECTOR AEC-Q101 Qualified and PPAP Capable3 S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements1BASEMAXIMUM RATINGS2Rating Symbol Value Uni

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMBT4401WT1GSwitching TransistorNPN SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model; 4 kV,Machine Model; 400 VCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3Compliant1BASEMAXIMUM RATINGS 2EMITTERRating Symbol Value UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO

MMBT4401L, SMMBT4401LSwitching TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comhttp://onsemi.comCompliantCOLLECTOR AEC-Q101 Qualified and PPAP Capable3 S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements1BASEMAXIMUM RATINGS2Rating Symbol Value Uni

MMBT4401WT1GSwitching TransistorNPN SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model; 4 kV,Machine Model; 400 VCOLLECTOR These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS3Compliant1BASEMAXIMUM RATINGS 2EMITTERRating Symbol Value UnitCollector -- Emitter Voltage VCEO 40 VdcCollector -- Base Volta

UNISONIC TECHNOLOGIES CO., LTD MMBT4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 31 DESCRIPTION 2The UTC MMBT4401 is designed for use as a medium power SOT-23amplifier and switch requiring collector currents up to 500mA. (JEDEC TO-236)312SOT-323 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3MMBT4401G-AE3-R SOT-

MMBT4401NPN Silicon TransistorDescriptions PIN Connection PIN Connection General purpose application Switching application Features Low Leakage current Low collector saturation voltage enabling low voltage operation Complementary pair with MMBT4403 SOT-23 Ordering Information Type NO. Marking Package Code 4P MMBT4401 SOT-23

MMBT4401WNPN SiliconElektronische BauelementeSwitching TransistorRoHS Compliant ProductASOT-323LCOLLECTOR Dim Min Max3A 1.800 2.200STop ViewBB 1.150 1.35031C 0.800 1.000BASEV GD 0.300 0.4001G 1.200 1.40022CH 0.000 0.100EMITTERH J 0.100 0.250JDKK 0.350 0.500L 0.590 0.720S 2.000 2.400MAXIMUM RATINGSV 0.280 0.420Rating Symbo

MMBT4401NPN SiliconElektronische BauelementeSwitching TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeACOLLECTORSOT-23L3Dim Min Max33A 2.800 3.040STop View1 B11 2 B 1.200 1.400BASE2C 0.890 1.110V GD 0.370 0.5002EMITTERG 1.780 2.040CH 0.013 0.100J 0.085 0.177HJDKK 0.450 0.600L 0.890 1.020MAXIM

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR (NPN) SOT23 FEATURES Switching Transistor MARKING:2X MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit1. BASE VCBO Collector-Base Voltage 60 V 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLLECTOR VEBO Emitter-Base Vol

Zowie Technology CorporationSwitching TransistorNPN SiliconLead free productHalogen-free typeCOLLECTOR33BASE11MMBT4401GH22EMITTERSOT-23MAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 600 mAdcTHERMAL CHARACTERISTICSCharacteri

MMBT4401TRANSISTOR(NPN)SOT-23 FEATURES Switching transistor 1. BASE MARKING: MMBT4401=2X 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 40 VEmitter-Base Voltage VEBO 6 V Collector Current -Continuous IC 600 mAPC Collector Power dissipation

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM4401MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Emitter VoltageVCEO 40 Vdc-

MMBT4401 SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR Features Switching transistor MARKING: MMBT4401=2X MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base Voltage VCBO 60 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Voltage 40 VEmitter-Base Voltage VEBO 6 V Collector Current -Continuou

MMBT4401COLLECTOR3Switching Transistor NPN Silicon311BASE22SOT-23EMITTERMaximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V 40 VdcCEOCollector-Base Voltage VCBO 60 VdcEmitter-Base VOltage VEBO 6.0 VdcCollector Current-Continuous IC 600 mAdcThermal CharacteristicsCharacteristics Symbol Max UnitTotal Device Dissipation FR-5 Board (1)mW

FM120-M WILLASMMBT4401LT1THRUGeneral Purpose TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeaturesBatch process design, excellent power dissipation offersWe declare that the material of product compliance with RoHS requirements. better reverse leakage current and thermal resistance.

FM120-M WILLASTHRUMMBT4401WT1General Purpose Transistors FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to We declare

SOT-23 Plastic-Encapsulate TransistorsSOT-23 Plastic-Encapsulate TransistorsSOT-23 Plastic-Encapsulate TransistorsSOT-23 Plastic-Encapsulate TransistorsFEATURESFEATURESFEATURESFEATURESSwitching transistorSOT-23MARKING: MMBT4401=2XMARKING: MMBT4401=2XMARKING: MMBT4401=2XMARKING: MMBT4401=2XMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS (TA=25 unless otherwise no

MMBT4401 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features 1ESD 4kV, 400VMoisture Sensitivity Level: 1, ESD Rating: Human Body Model; 4 kV, Machine Model; 400 V. / Applications I 500mA

MMBT4401 NPN Silicon General Purpose Transistor TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 40 VEmitter Base Voltage VEBO 6 VCollector Current Continuous IC 600 mATotal Device Dissipation FR-5 Board 1) Ptot 300 mWOThermal Resistance Junction to Ambient RJA 417 C/W

SMD Type TransistorsNPN Transistors MMBT4401 (KMBT4401)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Ideal for Medium Power Amplification and Switching Complementary PNP Type Available (MMBT4403)1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitColle

MMBT4401NPN GENERAL PURPOSE SWITCHING TRANSISTORPOWER40 Volt 225 mWattVOLTAGEFEATURES0.120(3.04) NPN epitaxial silicon, planar design0.110(2.80) Collector-emitter voltage VCE = 40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2011/65/EU directive0.056(1.40) Green molding compound as per IEC61249 Std. . 0.047(1.20) (Halogen Free)0

General Purpose TransistorMMBT4401-G (NPN)RoHS DeviceFeaturesSOT-23 -Switching Transistor0.118(3.00)0.110(2.80)30.055(1.40)Circuit Diagram 0.047(1.20)1 20.079(2.00)0.071(1.80)Collector30.006(0.15)0.003(0.08)0.041(1.05)0.100(2.55)10.035(0.90)Base 0.089(2.25)20.004(0.10) maxEmitter0.020(0.50)0.020(0.50) 0.012(0.30)0.012(0.30) Dimension

RUMW UMW MMBT4401SOT-23 Plastic-Encapsulate TransistorsMMBT4401 TRANSISTOR (NPN) SOT-23 FEATURES Switching Transistor MARKING:2X 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 60

SOT-23 Plastic-Encapsulate TransistorsFormosa MSMMBT4401 TRANSISTOR (NPN) FEATURES Switching Transistor SOT23 MARKING:2X MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V 1. BASE VEBO Emitter-Base Voltage 6 V 2. EMITTER IC Collector Current 600 mA 3. COLLECTOR PC

MMBT4401 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )SOT- 23Features Switching Transistor Marking: 2XSymbol Parameter Value Unit VCBO Collector-Base Voltage 60 V V Collector-Emitter Voltage 40 V CEOCV Emitter-Base Voltage 6 V EBOI Collector Current 600 mA CP Collector Power Dissipation 300 mW CRJA Thermal Resistance From Junction T

MMBT4401NPN Silicon Epitaxial Planar Transistor FEATURES Epitaxial planar die construction. Complementary PNP type available: MMBT4403. Ideal for medium power amplification and switching. APPLICATIONS General purpose application, switching application. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UnitsCollector-Base Voltage V

MMBT4401TRANSISTOR (NPN) FEATURES SOT-23 Switching transistor MARKING MMBT4401=2X 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Units3. COLLECTOR VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 0.6 A PC Collector Power Dissipation 0

www.msksemi.comMMBT4401Semiconductor CompianceSemiconductor CompianceFEATURES Switching TransistorMARKING:2X SOT23 1. BASE2. EMITTER3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collect

MMBT4401 NPN Transistor Features For Switching and AF Amplifer Applications. Silicon Epitaxial Chip.SOT-23 (TO-236) 1.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings (T = 25) AParameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current I 600 mA CPower Dissipation 1

Jingdao Microelectronics co.LTD MMBT4401MMBT4401SOT-23NPN TRANSISTOR3FEATURES Switching Transistor 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO 60 V2.EMITTERCollectorEmitter Voltage VCEO 40 V3.COLLECTOREmitterBase Voltage VEBO 6 V

MMBT4401 SOT-23 NPN Transistors3 Features Ideal for Medium Power Amplification and Switching2 1.Base Complementary PNP Type Available (MMBT4403)2.Emitter1 3.Collector Simplified outline(SOT-23) MarkingMarking 2X Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector-base voltage VCBO 60 VCollector-emitter voltage VCEO

MMBT4401 TRANSI STOR (NPN)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Complimentary to MMBT4403 Collector Current: Ic=0.6A Switching TransistorMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitVCBO 60 VCollector-Base VoltageVCEO 40 VCollector-Emitter VoltageVEBO 6 VEmitter-Base VoltageIC 600 mAC

MMBT3904MMBT4401AO3400SI2305MMBT4401 TRANSISTOR ( NPN) FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT4403) Ideal for Medium Power Amplification and SwitchingSOT-23 1BASE 2EMITTER 3COLLECTOR MARKING: 2X MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base VoltageVCBO 60

RoHS RoHSCOMPLIANT COMPLIANTMMBT4401Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications Switching and linear amplification Mechanical Data Case: SOT-23 Terminals: Tin plated leads,

RoHS RoHSCOMPLIANT COMPLIANTMMBT4401 NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking: 2X Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Collector-Base Voltage VCBO V 60 Collector

MMBT4401 MMBT4401 SOT-23 Plastic-Encapsulate Switching Transistors (NPN) General description SOT-23 Plastic-Encapsulate Switching Transistors (NPN) FEATURES Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 DEVICE MARKING CODE: Device Type Device Marking MMBT4401 2X Maximum Ratings & The

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBT4401 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter VoltageVCEO 40 Vdc-Collector-Base VoltageVCBO 60 Vdc-Emitter-Base VoltageVEBO6.0 Vdc-

MMBT4401NPN GENERAL PURPOSE SWITCHING TRANSISTOR60Volts POWER 300mWattsVOLTAGEFEATURESNPN epitaxial silicon, planar design. Collector-emitter voltage VCE=40V.Collector current IC=0.6A.ansition frequency fT>250MHz @ TrIC=20mAdc, VCE=20Vdc, f=100MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminals: So

MMBT4401BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to MMBT4403 Switching Transistor Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCollector-Base V

Features ASOT-23 CDim Min MaxA0.37 0.51B CB1.20 1.40TOP VIEWB ECD 2.30 2.50EGD0.89 1.03E0.45 0.60HG1.78 2.05KH2.8