Биполярный транзистор SRC1212UF - описание производителя. Основные параметры. Даташиты.
Наименование производителя: SRC1212UF
Маркировка: RB
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 100 kOhm
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: SOT-323F
Аналоги (замена) для SRC1212UF
SRC1212UF Datasheet (PDF)
src1212uf.pdf
SRC1212UFNPN Silicon TransistorPIN Connection Descriptions OUT Switching application Interface circuit and driver circuit application OUT IN R1Features With built-in bias resistor IN Simplify circuit design COMMON Reduce a quantity of parts and R1 = 100Kmanufacturing process High packing density COMMON Ordering Information Typ
src1212u.pdf
SRC1212UNPN Silicon TransistorPIN Connection Descriptions OUT Switching application Interface circuit and driver circuit application IN R1Features OUT IN With built-in bias resistor Simplify circuit design COMMON Reduce a quantity of parts and R1 = 100Kmanufacturing process High packing density COMMON Ordering Information Ty
src1212.pdf
SRC1212NPN Silicon TransistorPIN Connection Descriptions Switching application OUT Interface circuit and driver circuit application Features IN R1 With built-in bias resistor Simplify circuit design Reduce a quantity of parts and R1 = 100K1 2 3 manufacturing process High packing density COMMON Ordering Information Type NO. Mark
src1212e.pdf
SRC1212ENPN Silicon TransistorPIN Connection Descriptions Switching application OUT Interface circuit and driver circuit application Features IN R1OUT With built-in bias resistor IN Simplify circuit design COMMON Reduce a quantity of parts and R1 = 100Kmanufacturing process High packing density COMMON Ordering Information
src1212ef.pdf
SRC1212EFNPN Silicon TransistorPIN Connection Descriptions Switching application OUT Interface circuit and driver circuit application OUT Features IN R1 With built-in bias resistor IN Simplify circuit design COMMON Reduce a quantity of parts and R1 = 100Kmanufacturing process High packing density COMMON Ordering Information Typ
src1212s.pdf
SRC1212SNPN Silicon TransistorPIN Connection Descriptions OUT Switching application Interface circuit and driver circuit application OUT Features IN R1 With built-in bias resistor Simplify circuit design IN Reduce a quantity of parts and COMMONR1 = 100Kmanufacturing process High packing density COMMON Ordering Information Ty
src1212m.pdf
SRC1212MNPN Silicon TransistorPIN Connection Descriptions Switching application OUT Interface circuit and driver circuit application Features IN R1 With built-in bias resistor Simplify circuit design Reduce a quantity of parts and R1 = 100K1 2 3 manufacturing process High packing density COMMON Ordering Information Type NO. Mar
src1212sf.pdf
SRC1212SFNPN Silicon TransistorPIN Connection Descriptions OUT Switching application Interface circuit and driver circuit application OUT Features IN R1 With built-in bias resistor IN Simplify circuit design Reduce a quantity of parts and COMMON R1 = 100Kmanufacturing process High packing density COMMON Ordering Information T
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050