2N637 datasheet и подбор замены

 0.1. Size:302K  1
 2n6370.pdf 

 0.2. Size:171K  motorola
 2n6379re.pdf 

Order this document MOTOROLA by 2N6379/D SEMICONDUCTOR TECHNICAL DATA 2N6379* High-Power PNP Silicon *Motorola Preferred Device Transistors 50 AMPERE POWER TRANSISTORS . . . designed for use in industrial military power amplifier and switching circuit PNP SILICON applications. 80, 100, 120 VOLTS High Collector Emitter Sustaining Voltage 250 WATTS VCEO(sus) = 120 Vdc (M

 0.3. Size:114K  central
 2n5954 2n5955 2n5956 2n6372 2n6373 2n6374.pdf 

TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com

 0.4. Size:202K  comset
 2n6253-2n6254-2n6371.pdf 

2N6253 - 2N6254 - 2N6371 HIGH POWER SILICON NPN TRANSISTORS The 2N6253, 2N6254, and 2N6371 are silicon NPN transistors intended for a wide variety of high-power applications. The construction of these devices renders them highly resistant to second breakdown over a wide range of operating conditions. These devices differ in maximum ratings for voltage and power dissipation. All are suppli

 0.5. Size:148K  jmnic
 2n6371.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2N6371 DESCRIPTION With TO-3 package Low collector saturation voltage High dissipation capability Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power-switching circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and s

 0.6. Size:151K  jmnic
 2n6372 2n6373 2n6374.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2N6372 2N6373 2N6374 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area APPLICATIONS Designed for switching and wide-band amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ra

 0.7. Size:116K  inchange semiconductor
 2n6371.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6371 DESCRIPTION With TO-3 package Low collector saturation voltage High dissipation capability Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power-switching circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified out

 0.8. Size:220K  inchange semiconductor
 2n6378.pdf 

isc Silicon PNP Power Transistor 2N6378 DESCRIPTION Collector-Emitter Breakdown Voltage- V =-100V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage -120 V CBO V Collector-Emitter Voltage

 0.9. Size:118K  inchange semiconductor
 2n6372 2n6373 2n6374.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6372 2N6373 2N6374 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area APPLICATIONS Designed for switching and wide-band amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Ab

 0.10. Size:219K  inchange semiconductor
 2n6377.pdf 

isc Silicon PNP Power Transistor 2N6377 DESCRIPTION Collector-Emitter Breakdown Voltage- V =-80V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage -100 V CBO V Collector-Emitter Voltage -