Справочник транзисторов. 2N6378E

 

Биполярный транзистор 2N6378E - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N6378E
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 250 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 50 A
   Предельная температура PN-перехода (Tj): 200 °C
   Граничная частота коэффициента передачи тока (ft): 25 MHz
   Ёмкость коллекторного перехода (Cc): 1500 pf
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: TO3

 Аналоги (замена) для 2N6378E

 

 

2N6378E Datasheet (PDF)

 8.1. Size:220K  inchange semiconductor
2n6378.pdf

2N6378E
2N6378E

isc Silicon PNP Power Transistor 2N6378DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-100V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -120 VCBOV Collector-Emitter Voltage

 9.1. Size:302K  1
2n6370.pdf

2N6378E
2N6378E

 9.2. Size:171K  motorola
2n6379re.pdf

2N6378E
2N6378E

Order this documentMOTOROLAby 2N6379/DSEMICONDUCTOR TECHNICAL DATA2N6379*High-Power PNP Silicon*Motorola Preferred DeviceTransistors50 AMPEREPOWER TRANSISTORS. . . designed for use in industrialmilitary power amplifier and switching circuitPNP SILICONapplications.80, 100, 120 VOLTS High Collector Emitter Sustaining Voltage 250 WATTSVCEO(sus) = 120 Vdc (M

 9.3. Size:114K  central
2n5954 2n5955 2n5956 2n6372 2n6373 2n6374.pdf

2N6378E
2N6378E

TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com

 9.4. Size:202K  comset
2n6253-2n6254-2n6371.pdf

2N6378E
2N6378E

2N6253 - 2N6254 - 2N6371HIGH POWER SILICON NPN TRANSISTORSThe 2N6253, 2N6254, and 2N6371 are silicon NPN transistors intended for a widevariety of high-power applications. The construction of these devices renders themhighly resistant to second breakdown over a wide range of operating conditions.These devices differ in maximum ratings for voltage and power dissipation. All aresuppli

 9.5. Size:148K  jmnic
2n6371.pdf

2N6378E
2N6378E

JMnic Product Specification Silicon NPN Power Transistors 2N6371 DESCRIPTION With TO-3 package Low collector saturation voltage High dissipation capability Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power-switching circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and s

 9.6. Size:151K  jmnic
2n6372 2n6373 2n6374.pdf

2N6378E
2N6378E

JMnic Product Specification Silicon NPN Power Transistors 2N6372 2N6373 2N6374 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area APPLICATIONS Designed for switching and wide-band amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsolute maximum ra

 9.7. Size:116K  inchange semiconductor
2n6371.pdf

2N6378E
2N6378E

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6371 DESCRIPTION With TO-3 package Low collector saturation voltage High dissipation capability Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power-switching circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified out

 9.8. Size:118K  inchange semiconductor
2n6372 2n6373 2n6374.pdf

2N6378E
2N6378E

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6372 2N6373 2N6374 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area APPLICATIONS Designed for switching and wide-band amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAb

 9.9. Size:219K  inchange semiconductor
2n6377.pdf

2N6378E
2N6378E

isc Silicon PNP Power Transistor 2N6377DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-80V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -100 VCBOV Collector-Emitter Voltage -

Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
Back to Top