STB1277LPNP Silicon TransistorDescription PIN Connection Audio power amplifier High current application Features High current : IC=-2A Complementary pair with STD1862L TO -92L 1: Emitter 2 :Collector 3: Base Ordering Information Type NO. Marking Package Code STB1277L STB1277 TO-92L Absolute maximum ratings (Ta=25C) Characteristic Symbol Rati

STB1277PNP Silicon TransistorDescription PIN Connection Audio power amplifier E High current application BFeatures High current : IC=-2A C Complementary pair with STD1862 TO-92 Ordering Information Type NO. Marking Package Code STB1277 STB1277 TO-92 Absolute maximum ratings (Ta=25C) Characteristic Symbol Ratings UnitCollector-Base volta

STB1277(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features Audio power amplifier High current application High current : IC=-2A Complementary pair with STD1862 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -30 VVCEO Collector-Emitter Voltage -30 VVEBO Emitter-Base Voltage

STB120N4F6, STD120N4F6Automotive-grade N-channel 40 V, 3.5 m typ., 80 ASTripFET F6 Power MOSFETs in DPAK and DPAK packagesDatasheet - production dataFeaturesOrder codes VDS RDS(on) max. IDSTB120N4F6 40 V 4 m 80 ATABSTD120N4F6 40 V 4 m 80 ATAB Designed for automotive applications and 33AEC-Q101 qualified11 Very low on-resistanceDPAKDPAK

STB12NM50FD - STB12NM50FD-1STP12NM50FD/FP - STW14NM50FDN-channel 500V - 0.32 - 12A - TO-220/FP - D2/I2PAK - TO-247FDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID Pw33STB12NM50FD 500V

STB12NM50N,STD12NM50N,STI12NM50NSTF12NM50N, STP12NM50NN-channel 500 V, 0.29 , 11 A MDmesh II Power MOSFETTO-220 - DPAK - D2PAK - I2PAK - TO-220FPFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB12NM50N 550 V 0.38 11 AIPAKTO-220STD12NM50N 550 V 0.38 11 A31STI12NM50N 550 V 0.38 11 ADPAKSTF12NM50N 550 V 0.38 11 A (1)STP12NM50N 5

STP12NM50 - STP12NM50FPSTB12NM50 - STB12NM50-1N-channel 550V @ tjmax - 0.30 - 12A TO-220/FP/D2/I2PAK MDmesh Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)33STB12NM50 550V

STB120NH03L - STI120NH03LSTP120NH03LN-channel 30V - 0.005 - 60A - TO-220 / D2PAK / I2PAKSTripFET Power MOSFET for DC-DC conversionGeneral featuresType VDSS RDS(on) IDSTB120NH03L 30V

STB12NM50NDSTD12NM50ND, STF12NM50NDN-channel 500 V, 0.29 , 11 A, FDmesh II Power MOSFET(with fast diode) in D2PAK, DPAK, TO-220FPFeatures Type VDSS (@Tjmax) RDS(on) max IDSTB12NM50ND 550 V 0.38 11 ASTD12NM50ND 550 V 0.38 11 ASTF12NM50ND 550 V 0.38 11 A33 3211 1 100% avalanche testedD2PAK DPAK TO-220FP Low input capacitance and gate charge

STB12N120K5, STFW12N120K5STP12N120K5, STW12N120K5N-channel 1200 V, 0.58 , 12 A DPAK, TO-3PF, TO-220, TO-247Zener-protected SuperMESH 5 Power MOSFETPreliminary dataFeaturesTAB111RDS(on) Order codes VDSS ID PW2max.3312STB12N120K5 250 W1DPAKTO-3PFSTFW12N120K5 63 W1200 V

STB12NK80ZSTP12NK80Z - STW12NK80ZN-channel 800V - 0.65 - 10.5A - TO-220 - D2PAK - TO-247Zener - Protected SuperMESH Power MOSFETFeaturesVDSS Type RDS(on) ID PW(@Tjmax)STB12NK80Z 800V

STP120NF10, STB120NF10STF120NF10, STW120NF10N-channel 100 V, 0.009 , 110 A STripFET II Power MOSFETin TO-247, TO-220, DPAK, TO-220FPFeaturesType VDSS RDS(on) max IDSTW120NF10 110 A31STP120NF10 110 A100V

STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80ZN-channel 800 V, 0.65 typ., 10.5 A Zener-protected SuperMESHPower MOSFET in D2PAK, TO-220FP, TO-220 and TO-247Datasheet production dataFeaturesTABVDSS Type RDS(on) ID PW(@Tjmax)313STB12NK80Z 800V

STB120N10F4, STP120N10F4N-channel 100 V, 8 m typ., 120 A, STripFET DeepGATE Power MOSFETs in D2PAK and TO-220 packagesDatasheet - production dataFeatures Order codes VDS RDS(on) max. IDTABSTB120N10F4TAB100 V 10 m 120 A STP120N10F4 N-channel enhancement mode33211 Very low on-resistanceD 2PAK TO-220 Low gate charge 100% avalanche rate

STB12NM50T4, STP12NM50, STP12NM50FPDatasheetN-channel 500 V, 300 m typ., 12 A MDmesh Power MOSFETs in a DPAK, TO-220 and TO-220FP packagesFeaturesTABVDS RDS(on) max. IDOrder codes312D PAK3STB12NM50T421TO-220FPTAB STP12NM50 500 V 350 m 12 ASTP12NM50FP32 100% avalanche tested1TO-220 Low input capacitance and gate charge Low gate inp

STB120NH03L - STI120NH03LSTP120NH03LN-channel 30V - 0.005 - 60A - TO-220 / D2PAK / I2PAKSTripFET Power MOSFET for DC-DC conversionGeneral featuresType VDSS RDS(on) IDSTB120NH03L 30V

STP12NM50 - STP12NM50FPSTB12NM50 - STB12NM50-1N-channel 550V @ tjmax - 0.30 - 12A TO-220/FP/D2/I2PAK MDmesh Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)33STB12NM50 550V

STB120NF10T4, STP120NF10, STW120NF10 N-channel 100 V, 9.0 m typ., 110 A STripFET II Power MOSFETs in DPAK, TO-220 and TO-247 packages Datasheet - production data TABFeatures Order code V R max. I DS DS(on) DSTB120NF10T4 STP120NF10 100 V 10.5 m 110 A D2PAKTAB STW120NF10 Exceptional dv/dt capability 100% avalanche tested 3 Low gate charge 3

STP120NF10, STB120NF10STF120NF10, STW120NF10N-channel 100 V, 0.009 , 110 A STripFET II Power MOSFETin TO-247, TO-220, DPAK, TO-220FPFeaturesType VDSS RDS(on) max IDSTW120NF10 110 A31STP120NF10 110 A100V

STB12NM60N/-1 - STF12NM60NSTP12NM60N - STW12NM60NN-channel 600V - 0.35 - 10A - D2/I2PAK - TO-220/FP - TO-247Second generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID3(@Tjmax)31 21STB12NM60N 650V

STP12NM50 - STP12NM50FPSTB12NM50 - STB12NM50-1N-channel 550V @ tjmax - 0.30 - 12A TO-220/FP/D2/I2PAK MDmesh Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)33STB12NM50 550V

STP120NF10, STB120NF10STF120NF10, STW120NF10N-channel 100 V, 0.009 , 110 A STripFET II Power MOSFETin TO-247, TO-220, DPAK, TO-220FPFeaturesType VDSS RDS(on) max IDSTW120NF10 110 A31STP120NF10 110 A100V

STB12NM60N/-1 - STF12NM60NSTP12NM60N - STW12NM60NN-channel 600V - 0.35 - 10A - D2/I2PAK - TO-220/FP - TO-247Second generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID3(@Tjmax)31 21STB12NM60N 650V

STB12NM50FD - STB12NM50FD-1STP12NM50FD/FP - STW14NM50FDN-channel 500V - 0.32 - 12A - TO-220/FP - D2/I2PAK - TO-247FDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID Pw33STB12NM50FD 500V

STB120N4F6STD120N4F6, STP120N4F6N-channel 40 V, 4 m , 80 A, DPAK, DPAK, TO-220STripFET VI DeepGATE Power MOSFETFeaturesRDS(on) Type VDSS IDmax.STB120N4F6 40 V 4 m 80 A 3STD120N4F6 40 V 4 m 80 A311STP120N4F6 40 V 4.3 m 80 ADPAKDPAK Standard threshold drive 100% avalanche tested 321TO-220Application Switching applications

STB120N4LF6STD120N4LF6N-channel 40 V, 4 m, 80 A DPAK, D2PAKSTripFET VI DeepGATE Power MOSFETPreliminary dataFeaturesType VDSS RDS(on) max IDSTB120N4LF6 40 V 4.0 m 80 A STD120N4LF6 40 V 4.0 m 80 A3311 Logic level driveDPAKDPAK 100% avalanche testedApplication Switching applications AutomotiveFigure 1. Internal schematic diagram

STP120NF10 - STB120NF10STW120NF10N-channel 100V - 0.009 - 110A - TO-247 - TO-220 - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTW120NF10 100V

STB120NF10www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Maximum Junction Temperature0.010 at VGS = 10 V100100 Compliant to RoHS Directive 2002/95/EC0.023 at VGS = 4.5 V85D TO-263G G D S Top ViewS N-Channel MOSFETABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise