Справочник транзисторов. MJE13005DK

 

Биполярный транзистор MJE13005DK Даташит. Аналоги


   Наименование производителя: MJE13005DK
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 44 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 700 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
   Макcимальный постоянный ток коллектора (Ic): 4 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 4 MHz
   Статический коэффициент передачи тока (hfe): 15
   Корпус транзистора: TO-251
 

 Аналог (замена) для MJE13005DK

   - подбор ⓘ биполярного транзистора по параметрам

 

MJE13005DK Datasheet (PDF)

 5.1. Size:118K  utc
mje13005d.pdfpdf_icon

MJE13005DK

UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER 11TRANSISTOR TO-220TO-220F DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN 1power transistor. It is characterized by high breakdown voltage,1high current capability, high switching speed and high reliability. TO-251 TO-126The UTC

 5.2. Size:115K  utc
mje13005d-k.pdfpdf_icon

MJE13005DK

UNISONIC TECHNOLOGIES CO., LTD MJE13005D-K Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D-K is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,high current capability, high switching speed and high reliability. The UTC MJE13005D-K is intended to be used in

 5.3. Size:51K  kec
mje13005d.pdfpdf_icon

MJE13005DK

SEMICONDUCTOR MJE13005DTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE HIGH SPEED POWER SWITCHAPPLICATION.ABuilt-in Free wheeling Diode makes efficient anti saturation operation.OCSuitable for half bridge light ballast Applications.FDIM MILLIMETERSLow base drive requirement.E _G A 9.9 + 0.2MAXIMUM RATING (Ta=25 )B 15.95 MAXBC 1.3+0.1/-0.05Q_CHAR

 5.4. Size:375K  kec
mje13005df.pdfpdf_icon

MJE13005DK

SEMICONDUCTOR MJE13005DFTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE HIGH SPEED POWER SWITCHAPPLICATION.ACBuilt-in Free wheeling Diode makes efficient anti saturation operation.DIM MILLIMETERSSSuitable for half bridge light ballast Applications._A 10.0 + 0.3_+B 15.0 0.3ELow base drive requirement.C _2.70 0.3+D 0.76+0.09/-0.05MAXIMUM R

Другие транзисторы... HJ44H11 , MJE13001 , MJE13001P , MJE13002-E , MJE13003D , MJE13003DP , MJE13003-E , MJE13003P , D880 , MJE13005K , MJE13007D , MJE13007M , MJE13009D , MJE13009K , MJE13009P , MMBT9018 , MPSA194 .

 

 
Back to Top

 


 
.