MJE13005DK Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE13005DK
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 44 W
Tensión colector-base (Vcb): 700 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 9 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4 MHz
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta: TO-251
Búsqueda de reemplazo de MJE13005DK
MJE13005DK datasheet
mje13005d.pdf
UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER 1 1 TRANSISTOR TO-220 TO-220F DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN 1 power transistor. It is characterized by high breakdown voltage, 1 high current capability, high switching speed and high reliability. TO-251 TO-126 The UTC
mje13005d-k.pdf
UNISONIC TECHNOLOGIES CO., LTD MJE13005D-K Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D-K is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE13005D-K is intended to be used in
mje13005d.pdf
SEMICONDUCTOR MJE13005D TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A Built-in Free wheeling Diode makes efficient anti saturation operation. O C Suitable for half bridge light ballast Applications. F DIM MILLIMETERS Low base drive requirement. E _ G A 9.9 + 0.2 MAXIMUM RATING (Ta=25 ) B 15.95 MAX B C 1.3+0.1/-0.05 Q _ CHAR
mje13005df.pdf
SEMICONDUCTOR MJE13005DF TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A C Built-in Free wheeling Diode makes efficient anti saturation operation. DIM MILLIMETERS S Suitable for half bridge light ballast Applications. _ A 10.0 + 0.3 _ + B 15.0 0.3 E Low base drive requirement. C _ 2.70 0.3 + D 0.76+0.09/-0.05 MAXIMUM R
Otros transistores... HJ44H11 , MJE13001 , MJE13001P , MJE13002-E , MJE13003D , MJE13003DP , MJE13003-E , MJE13003P , 2N4401 , MJE13005K , MJE13007D , MJE13007M , MJE13009D , MJE13009K , MJE13009P , MMBT9018 , MPSA194 .
History: A1586 | TD13005DSMD | BR3DD13005LP7R | 13005EC | MJE13005DP5 | 2SD675
History: A1586 | TD13005DSMD | BR3DD13005LP7R | 13005EC | MJE13005DP5 | 2SD675
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