Биполярный транзистор BTA1210T3 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BTA1210T3
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 10 W
Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 150 °C
Ёмкость коллекторного перехода (Cc): 300 pf
Статический коэффициент передачи тока (hfe): 1000
Корпус транзистора: TO126
Аналоги (замена) для BTA1210T3
BTA1210T3 Datasheet (PDF)
bta1210t3.pdf
Spec. No. : C656T3 Issued Date : 2004.09.01 CYStech Electronics Corp.Revised Date :2007.12.18 Page No. : 1/4 PNP Epitaxial Planar Transistor BTA1210T3 Description The BTA1210T3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Features High BV CEO High DC current gain High current capability
bta1210f3.pdf
Spec. No. : C656F3 Issued Date : 2007.02.02 CYStech Electronics Corp.Revised Date :2007.12.18 Page No. : 1/5 PNP Epitaxial Planar Transistor BTA1210F3 Description The BTA1210F3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Features High BV CEO High DC current gain High current capability
bta1210j3.pdf
Spec. No. : C656J3 Issued Date : 2004.05.12 CYStech Electronics Corp.Revised Date :2010.12.08 Page No. : 1/7 PNP Epitaxial Planar Transistor BVCEO -120VBTA1210J3 IC -10ARCESAT 270m Description The BTA1210J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Features High BV CEO High DC curr
bta1210fp.pdf
Spec. No. : C656FP Issued Date : 2005.03.29 CYStech Electronics Corp.Revised Date :2013.09.17 Page No. : 1/6 PNP Epitaxial Planar Transistor BTA1210FP Description The BTA1210FP is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Features High BV CEO High DC current gain High current capability
bta1210e3.pdf
Spec. No. : C656E3 Issued Date : 2004.06.03 CYStech Electronics Corp.Revised Date :2013.10.11 Page No. : 1/5 PNP Epitaxial Planar Transistor BTA1210E3 Description The BTA1210E3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Features High BV CEO High DC current gain High current capability
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2N1972
