BTA1210T3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTA1210T3
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO126
BTA1210T3 Transistor Equivalent Substitute - Cross-Reference Search
BTA1210T3 Datasheet (PDF)
bta1210t3.pdf
Spec. No. : C656T3 Issued Date : 2004.09.01 CYStech Electronics Corp.Revised Date :2007.12.18 Page No. : 1/4 PNP Epitaxial Planar Transistor BTA1210T3 Description The BTA1210T3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Features High BV CEO High DC current gain High current capability
bta1210f3.pdf
Spec. No. : C656F3 Issued Date : 2007.02.02 CYStech Electronics Corp.Revised Date :2007.12.18 Page No. : 1/5 PNP Epitaxial Planar Transistor BTA1210F3 Description The BTA1210F3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Features High BV CEO High DC current gain High current capability
bta1210j3.pdf
Spec. No. : C656J3 Issued Date : 2004.05.12 CYStech Electronics Corp.Revised Date :2010.12.08 Page No. : 1/7 PNP Epitaxial Planar Transistor BVCEO -120VBTA1210J3 IC -10ARCESAT 270m Description The BTA1210J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Features High BV CEO High DC curr
bta1210fp.pdf
Spec. No. : C656FP Issued Date : 2005.03.29 CYStech Electronics Corp.Revised Date :2013.09.17 Page No. : 1/6 PNP Epitaxial Planar Transistor BTA1210FP Description The BTA1210FP is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Features High BV CEO High DC current gain High current capability
bta1210e3.pdf
Spec. No. : C656E3 Issued Date : 2004.06.03 CYStech Electronics Corp.Revised Date :2013.10.11 Page No. : 1/5 PNP Epitaxial Planar Transistor BTA1210E3 Description The BTA1210E3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Features High BV CEO High DC current gain High current capability
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
