BTA1514N3 - описание и поиск аналогов

Spec. No. C307N3 Issued Date 2003.06.27 CYStech Electronics Corp. Revised Date 2014.04.15 Page No. 1/6 General Purpose PNP Epitaxial Planar Transistor BVCEO -160V BTA1514N3 IC -0.6A VCESAT(MAX) -0.3V Description The BTA1514N3 is designed for general purpose application requiring high breakdown voltage. Large IC , IC( Max) = -0.6A High BVCEO, BVCEO= -16

Spec. No. C307M3 Issued Date 2007.01.10 CYStech Electronics Corp. Revised Date Page No. 1/5 General Purpose PNP Epitaxial Planar Transistor BTA1514M3 Description The BTA1514M3 is designed for general purpose application requiring high breakdown voltage. Large IC , IC( Max) = -0.6A High BVCEO, BVCEO= -150V Complementary to BTC3906M3. Pb-free pac

Spec. No. C306S3 Issued Date 2002.05.11 Revised Date 2014.01.24 CYStech Electronics Corp. Page No. 1/7 General Purpose PNP Epitaxial Planar Transistor BTA1576S3 Description The BTA1576S3 is designed for using in driver stage of AF amplifier and general purpose amplification. Excellent h linearity FE Complementary to BTC4081S3. Pb-free lead plating

Spec. No. C307S3 Issued Date 2003.06.27 CYStech Electronics Corp. Revised Date 2011.09.20 Page No. 1/6 General Purpose PNP Epitaxial Planar Transistor BTA1579S3 Description The BTP1579S3 is designed for high voltage amplification application. High BVCEO, BVCEO= -160V Complementary to BTC4102S3. Pb-free lead plating and halogen-free package Symbol O