BTA1514N3 Specs and Replacement
Type Designator: BTA1514N3
SMD Transistor Code: 2L
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: SOT23
BTA1514N3 Substitution
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BTA1514N3 datasheet
Spec. No. C307N3 Issued Date 2003.06.27 CYStech Electronics Corp. Revised Date 2014.04.15 Page No. 1/6 General Purpose PNP Epitaxial Planar Transistor BVCEO -160V BTA1514N3 IC -0.6A VCESAT(MAX) -0.3V Description The BTA1514N3 is designed for general purpose application requiring high breakdown voltage. Large IC , IC( Max) = -0.6A High BVCEO, BVCEO= -16... See More ⇒
Spec. No. C307M3 Issued Date 2007.01.10 CYStech Electronics Corp. Revised Date Page No. 1/5 General Purpose PNP Epitaxial Planar Transistor BTA1514M3 Description The BTA1514M3 is designed for general purpose application requiring high breakdown voltage. Large IC , IC( Max) = -0.6A High BVCEO, BVCEO= -150V Complementary to BTC3906M3. Pb-free pac... See More ⇒
Spec. No. C306S3 Issued Date 2002.05.11 Revised Date 2014.01.24 CYStech Electronics Corp. Page No. 1/7 General Purpose PNP Epitaxial Planar Transistor BTA1576S3 Description The BTA1576S3 is designed for using in driver stage of AF amplifier and general purpose amplification. Excellent h linearity FE Complementary to BTC4081S3. Pb-free lead plating... See More ⇒
Detailed specifications: BTA1210E3 , BTA1210F3 , BTA1210FP , BTA1210J3 , BTA1210T3 , BTA1270A3 , BTA1300A3 , BTA1514M3 , S8550 , BTA1542N3 , BTA1576S3 , BTA1579S3 , BTA1640F3 , BTA1640FP , BTA1640I3 , BTA1640J3 , BTA1640T3 .
History: BTA1210T3 | 2DI300A-050 | 2SD2358 | 2SB794
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History: BTA1210T3 | 2DI300A-050 | 2SD2358 | 2SB794
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