Spec. No. : C240M3 CYStech Electronics Corp. Issued Date : 2012.10.18 Revised Date : 2013.08.07 Page No. : 1/8 Low Vcesat PNP Epitaxial Planar Transistor BTB5839M3 Features Low VCE(sat), VCE(sat)=-0.3 V (max), at IC / IB = -2A / -0.1A Excellent current gain characteristics Pb-free lead plating and halogen-free package Symbol Outline BTB5893M3 SOT-89 BBa

Spec. No. : C314N3 Issued Date : 2005.04.20 CYStech Electronics Corp.Revised Date :2009.05.08 Page No. : 1/ 6 Low Saturation PNP Epitaxial Planar Transistor BTB589N3Description The BTB589N3 is designed with high current gain and low saturation voltage with collector current up to 1A continuous. Features Low VCE(SAT) , VCE(SAT) -0.3V (I / I =-1A/-100mA) C B L