All Transistors. BTB5839M3 Datasheet

 

BTB5839M3 Datasheet and Replacement


   Type Designator: BTB5839M3
   SMD Transistor Code: BF
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 190 MHz
   Collector Capacitance (Cc): 33 pF
   Forward Current Transfer Ratio (hFE), MIN: 180
   Noise Figure, dB: -
   Package: SOT89
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BTB5839M3 Datasheet (PDF)

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BTB5839M3

Spec. No. : C240M3 CYStech Electronics Corp. Issued Date : 2012.10.18 Revised Date : 2013.08.07 Page No. : 1/8 Low Vcesat PNP Epitaxial Planar Transistor BTB5839M3 Features Low VCE(sat), VCE(sat)=-0.3 V (max), at IC / IB = -2A / -0.1A Excellent current gain characteristics Pb-free lead plating and halogen-free package Symbol Outline BTB5893M3 SOT-89 BBa

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BTB5839M3

Spec. No. : C314N3 Issued Date : 2005.04.20 CYStech Electronics Corp.Revised Date :2009.05.08 Page No. : 1/ 6 Low Saturation PNP Epitaxial Planar Transistor BTB589N3Description The BTB589N3 is designed with high current gain and low saturation voltage with collector current up to 1A continuous. Features Low VCE(SAT) , VCE(SAT) -0.3V (I / I =-1A/-100mA) C B L

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: ESM2060 | 2SD1329K | DTA123EET1G | 3DD4617H | MP602 | ZXTN5551FL | HSE194

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