BTB5839M3 Specs and Replacement
Type Designator: BTB5839M3
SMD Transistor Code: BF
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 190 MHz
Collector Capacitance (Cc): 33 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Package: SOT89
BTB5839M3 Substitution
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BTB5839M3 datasheet
Spec. No. C240M3 CYStech Electronics Corp. Issued Date 2012.10.18 Revised Date 2013.08.07 Page No. 1/8 Low Vcesat PNP Epitaxial Planar Transistor BTB5839M3 Features Low VCE(sat), VCE(sat)=-0.3 V (max), at IC / IB = -2A / -0.1A Excellent current gain characteristics Pb-free lead plating and halogen-free package Symbol Outline BTB5893M3 SOT-89 B Ba... See More ⇒
Spec. No. C314N3 Issued Date 2005.04.20 CYStech Electronics Corp. Revised Date 2009.05.08 Page No. 1/ 6 Low Saturation PNP Epitaxial Planar Transistor BTB589N3 Description The BTB589N3 is designed with high current gain and low saturation voltage with collector current up to 1A continuous. Features Low VCE(SAT) , VCE(SAT) -0.3V (I / I =-1A/-100mA) C B L... See More ⇒
Detailed specifications: BTB1580L3, BTB1580M3, BTB1590N3, BTB4110D3, BTB4511J3, BTB5140N3, BTB5213L3, BTB5240N3, TIP3055, BTB9050N3, BTB9435J3, BTB9435L3, BTC945A3, BTC1510E3, BTC1510F3, BTC1510FP, BTC1510I3
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