BTD1383M3 - параметры, поиск аналогов, даташиты транзистора

BTD1383M3 Datasheet (PDF)

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Spec. No. : C214M3 Issued Date : 2006.11.10 CYStech Electronics Corp.Revised Date : 2013.08.06 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1383M3Description The BTD1383M3 is a darlington amplifier transistor. Pb-free package Symbol Outline SOT-89 BTD1383M3C B BBase B C E CCollector E EEmitter Absolute Maximum Ratin

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Spec. No. : C214L3 Issued Date : 2005.01.20 CYStech Electronics Corp.Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTD1383L3Description The BTD1383L3 is a darlington amplifier transistor. Symbol Outline BTD1383L3SOT-223 C CB E C BBase B CCollector E EEmitter Absolute Maximum Ratings (Ta=25C) Parameter

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Spec. No. : C857A3 Issued Date : 2013.03.26 CYStech Electronics Corp.Revised Date : Page No. : 1/8 NPN Epitaxial Planar Transistor BVCEO 20VAUDIO MUTING APPLICATION IC 500mARCE(SAT) 0.3(typ) BTD1304A3 Features High Emitter-Base voltage, VEBO=12V(min). High reverse hFE, reverse hFE=20(min.) @VCE=2V, IC=4mA. Low On-resistance, Ron=0.6(max)@IB=1mA.

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Spec. No. : C857N3 Issued Date : 2011.03.31 CYStech Electronics Corp.Revised Date : 2011.04.01 Page No. : 1/8 NPN Epitaxial Planar Transistor BVCEO 20VAUDIO MUTING APPLICATION IC 500mARCE(SAT) 0.3(typ) BTD1304N3 Features High Emitter-Base voltage, VEBO=12V(min). High reverse hFE, reverse hFE=20(min.) @VCE=2V, IC=4mA. Low On-resistance, Ron=0.6(max)@IB

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .