2SB772M - описание и поиск аналогов

2SB772M(BR3CG772M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , hFE Low saturation voltage, excellent hFE linearity and high hFE. / Applications , ,

2SB772M(3CG772M) PNP /SILICON PNP TRANSISTOR , , Purpose Output stage of audio amplifier, voltage regulator, DC-DC converter and relay driver. , h /Features Low saturation voltage, excellent h linearity FE FE and high h . FE /Absolut

2SB772 PNP medium power transistor Features High current Low saturation voltage Complement to 2SD882 Applications 1 2 Voltage regulation 3 Relay driver SOT-32 (TO-126) Generic switch Audio power amplifier DC-DC converter Figure 1. Internal schematic diagram Description The device is a PNP transistor manufactured by using planar Technology re

2SB772-R MCC 2SB772-O Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SB772-Y Micro Commercial Components CA 91311 2SB772-GR Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulat

2SB772-R MCC 2SB772-O Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SB772-Y Micro Commercial Components CA 91311 2SB772-GR Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulat

2SB772-R MCC 2SB772-O Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SB772-Y Micro Commercial Components CA 91311 2SB772-GR Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulat

2SB772-R MCC 2SB772-O Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SB772-Y Micro Commercial Components CA 91311 2SB772-GR Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulat

UNISONIC TECHNOLOGIES CO., LTD 2SB772 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SD882 ORDERING INFORMATION Ordering Number

UTC 2SB772L PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772L is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES *High current output up to 3A *Low saturation voltage *Complement to 2SD882L TO-92L 1 EMITTER 2 COLLECTOR 3 BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25 C

2SB772 2SD882 PNP / NPN Epitaxial Planar Transistors TO-126 P b Lead(Pb)-Free 1.EMITTER 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol PNP/2SB772 Unit NPN/2SD882 VCEO -30 30 Vdc Collector-Emitter Voltage VCBO -40 40 Vdc Collector-Base Voltage VEBO -5.0 5.0 Vdc Emitter-Base Voltage IC(DC) -3.0 3.0 Adc Collector Current(DC) IC(Pulse) -7.0 7.0 Adc

2SB772T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features V , ,h CE(sat) FE Low saturation voltage, excellent hFE linearity and high hFE. / Applications 3 , ,

ST 2SB772R PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 6 V -IC Collector Current 3 A O Total Power Dissipati

2SB772U PNP Silicon Epitaxial Power Transistor These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V -IC Collector Current 3 A -ICP Peak Collector Current

ST 2SB772T PNP Silicon Epitaxial Power Transistor These devices are intended for use in audio frequency power amplifier and low speed switching applications E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current

ST 2SB772U PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V -IC Collector Current 3 A -ICP Peak Collector Curre

LESHAN RADIO COMPANY, LTD. PNPSURFACEMOUNTTRANSISTOR L2SB772Q L2SB772P We declare that the material of product compliance with RoHS requirements. 4 1 2 3 DEVICE MARKING AND ORDERING INFORMATION SOT-89 Device Marking Shipping L2SB772Q 72Q 2500/Tape&Reel 2,4 L2SB772P 72P 2500/Tape&Reel COLLECTOR 1 MAXIMUM RATINGS(Ta=25 C) BASE Parameter Symbol Limits Unit 3 Collector-bas

DIP Type Transistors PNP Tr ansistors 2SB772 TO-126 Unit mm 8.00 0.30 3.25 0.20 Features PNP transistor High current output up to 3A Low Saturation Voltage 3.20 0.10 Complement to 2SD882 (1.00) (0.50) 0.75 0.10 1.75 0.20 1.60 0.10 0.75 0.10 1 2 3 #1 +0.10 2.28TYP 2.28TYP 0.50 0.05 [2.28 0.20] [2.28 0.20] 1. Base 2. Collector 3. Emitte

SMD Type Transistors PNP Tr ansistors 2SB772A Features 1.70 0.1 PNP transistor High current output up to 3A Low Saturation Voltage Complement to 2SD882A 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -70 V Collector to Emitter Voltage VCEO -60 V Emitter to Base V

SMD Type Transistors T PNP Transistor 2SB772 TO-252 Unit mm Features +0.15 +0.1 6.50-0.15 2.30-0.1 PNP transistor High current output up to 3A +0.2 +0.8 5.30-0.2 0.50-0.7 Low Saturation Voltage 4 Complement to 2SD882 0.127 +0.1 max 0.80-0.1 2 3 1 +0.1 2.3 0.60-0.1 1. BASE +0.15 4.60-0.15 2. COLLECTOR 3. EMITTER 4. COLLECTOR Absolute Maximum Rati

CHENMKO ENTERPRISE CO.,LTD 2SB772GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. (SC-62/SOT-89) SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A) * High speed switching time tstg= 1.0uSec (typ.) * PC= 1.5 W (mounted on ceramic substrate). 4.6MAX. 1.6MAX.

CHENMKO ENTERPRISE CO.,LTD 2SB772ZGP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. (SC-73/SOT-223) SC-73/SOT-223 * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A) * High speed switching time tstg= 1.0uSec (typ.) 1.65+0.15 * PC= 1.5 W (mounted on ceramic substrate). 6.5

2SB772T(3CA772T) PNP /SILICON PNP TRANSISTOR 3 , , /Purpose Output stage of 3 watts audio amplifier, regulator, DC-DC converter and relay driver. V , ,h /Features Low saturation voltage, excellent h FE CE(sat) FE linearity and high h . FE

2SB772S(3CA772S) PNP /SILICON PNP TRANSISTOR 3 , , /Purpose Output stage of 3 watts audio amplifier, regulator, DC-DC converter and relay driver. V , ,h /Features Low saturation voltage, excellent h FE CE(sat) FE linearity and high h . FE

2SB772D(3CA772D) PNP /SILICON PNP TRANSISTOR 3 , , Purpose Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. , h ./Features Low saturation voltage, excellent h linearity FE FE and high h . FE

www.msksemi.com 2SB772-MS Semiconductor Compiance Semiconductor Compiance 1. BASE TRANSISTOR (PNP) 2. COLLETOR FEATURES Low speed switching 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A

www.msksemi.com 2SB772 Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES Low Speed Switching 2 1 3 TO-252-2L MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V 1. BASE VEBO Emitter-Base Voltage -6 V 2. COLLECTOR IC Collector Current -Continuous -3

2SB772SQ Silicon PNP Power Transistor Features High current output up to 3A Low saturation voltage Complement to 2SD882SQ SOT-89 PIN1 Base PIN 2 Collector PIN 3 Emitter Applications These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta=25 unless otherwise specified) Parameter Symbo

B772 PNP Transistors Features 3 PNP transistor High current output up to 3A 2 Low Saturation Voltage 1.Base 1 Complement to 2SD882 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -30 V Emitter to Base Voltage VEBO -6 V

2SB772U PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications MARKING B772 O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V -IC Collector Current 3 A -ICP Peak C

2SB772SQ Silicon PNP Power Transistor Features High current output up to 3A Low saturation voltage Complement to 2SD882SQ SOT-89 PIN1 Base PIN 2 Collector PIN 3 Emitter Applications These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta=25 unless otherwise specified) Parameter Symbol

isc Silicon PNP Power Transistor 2SB772 DESCRIPTION High Collector Current -I = -3A C High Collector-Emitter Breakdown Voltage- V = -30V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SD882 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in the output stage of 3 watts a