2N646. Аналоги и основные параметры
Наименование производителя: 2N646
Тип материала: Ge
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 35 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 12 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 130 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 40 MHz
Ёмкость коллекторного перехода (Cc): 4 pf
Статический коэффициент передачи тока (hFE): 50
Корпус транзистора: TO40
Аналоги (замена) для 2N646
- подборⓘ биполярного транзистора по параметрам
2N646 даташит
0.2. Size:11K semelab
2n6462.pdf 
2N6462 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 300V dia. IC = 0.1A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1
0.3. Size:11K semelab
2n6463.pdf 
2N6463 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 250V dia. IC = 0.1A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1
0.4. Size:10K semelab
2n6465.pdf 
2N6465 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar NPN Device. 1 2 VCEO = 110V IC = 4A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci
0.5. Size:10K semelab
2n6466.pdf 
2N6466 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar NPN Device. 1 2 VCEO = 130V IC = 4A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci
0.6. Size:10K semelab
2n6468.pdf 
2N6468 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar PNP Device. 1 2 VCEO = 130V IC = 4A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci
0.7. Size:11K semelab
2n6461.pdf 
2N6461 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 300V dia. IC = 0.1A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1
0.8. Size:11K semelab
2n6464.pdf 
2N6464 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 250V dia. IC = 0.1A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1
0.9. Size:10K semelab
2n6467.pdf 
2N6467 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar PNP Device. 1 2 VCEO = 110V IC = 4A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci
0.10. Size:125K inchange semiconductor
2n6467 2n6468.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6467 2N6468 DESCRIPTION With TO-66 package Excellent safe operating area Complement to type 2N6465 2N6466 APPLICATIONS For use in audio amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum rati
0.11. Size:116K inchange semiconductor
2n6469.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6469 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area High gain at high current APPLICATIONS General-purpose of switching and linear-amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol
0.12. Size:125K inchange semiconductor
2n6465 2n6466.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6465 2N6466 DESCRIPTION With TO-66 package Excellent safe operating area Complement to type 2N6467 2N6468 APPLICATIONS For use in audio amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum rat
Другие транзисторы: 2N6447, 2N6448, 2N645, 2N6455, 2N6456, 2N6457, 2N6458, 2N6459, A940, 2N6460, 2N6461, 2N6462, 2N6463, 2N6464, 2N6465, 2N6466, 2N6467
