Биполярный транзистор 2N647-22
Даташит. Аналоги
Наименование производителя: 2N647-22
Тип материала: Ge
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.1
W
Макcимально допустимое напряжение коллектор-база (Ucb): 25
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 12
V
Макcимальный постоянный ток коллектора (Ic): 0.05
A
Предельная температура PN-перехода (Tj): 130
°C
Граничная частота коэффициента передачи тока (ft): 35
MHz
Ёмкость коллекторного перехода (Cc): 4
pf
Корпус транзистора:
TO22
- подбор биполярного транзистора по параметрам
2N647-22
Datasheet (PDF)
9.5. Size:154K jmnic
2n6477 2n6478.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2N6477 2N6478 DESCRIPTION With TO-220 package Low collector saturation voltage High voltage ratings Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power switching circuits Solenoid drivers PINNING PIN DESCRIPTION1 Base Collector;connected to
9.6. Size:130K inchange semiconductor
2n6470 2n6471 2n6472.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6470 2N6471 2N6472 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area High gain at high current APPLICATIONS General-purpose types of switching and linear-amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outlin
9.7. Size:59K inchange semiconductor
2n6475 2n6476.pdf 

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6475 2N6476 DESCRIPTION With TO-220 package Low collector saturation voltage Excellent safe operating area APPLICATIONS General-purpose medium power for switching and amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified out
9.8. Size:51K inchange semiconductor
2n6470.pdf 

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6470 DESCRIPTION Excellent Safe Operating Area High DC Current Gain- : hFE= 20-150(Min)@IC = 5A Low Saturation Voltage- : VCE(sat)= 1.3V(Max)@ IC = 5A APPLICATIONS Designed for general-purpose switching and linear amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL
9.9. Size:120K inchange semiconductor
2n6477 2n6478.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6477 2N6478 DESCRIPTION With TO-220 package Low collector saturation voltage High voltage ratings Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power switching circuits Solenoid drivers PINNING PIN DESCRIPTION1 Base Collecto
9.10. Size:60K inchange semiconductor
2n6473 2n6474.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6473 2N6474 DESCRIPTION With TO-220 package Low collector saturation voltage Excellent safe operating area APPLICATIONS General-purpose medium power for switching and amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute ma
Другие транзисторы... 2N6466
, 2N6467
, 2N6468
, 2N6469
, 2N647
, 2N6470
, 2N6471
, 2N6472
, 2SC2655
, 2N6473
, 2N6474
, 2N6475
, 2N6476
, 2N6477
, 2N6478
, 2N6478A
, 2N6479
.
History: MD6003F
| 2SD1879
| BFR53