Справочник транзисторов. 2N647-22

 

Биполярный транзистор 2N647-22 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N647-22
   Тип материала: Ge
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.1 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 12 V
   Макcимальный постоянный ток коллектора (Ic): 0.05 A
   Предельная температура PN-перехода (Tj): 130 °C
   Граничная частота коэффициента передачи тока (ft): 35 MHz
   Ёмкость коллекторного перехода (Cc): 4 pf
   Корпус транзистора: TO22

 Аналоги (замена) для 2N647-22

 

 

2N647-22 Datasheet (PDF)

 9.1. Size:511K  rca
2n647.pdf

2N647-22

 9.2. Size:84K  central
2n6473 2n6474 2n6475 2n6476.pdf

2N647-22

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.3. Size:345K  no
2n6477.pdf

2N647-22
2N647-22

 9.4. Size:101K  bocasemi
2n6106 2n6107 2n6108 2n6109 2n6110 2n6111 2n6288 2n6289 2n6290 2n6291 2n6292 2n6293 2n6473 2n6474 2n6475 2n6476.pdf

2N647-22
2N647-22

Boca Semiconductor Corp. BSC http://www.bocasemi.comhttp://www.bocasemi.com

 9.5. Size:154K  jmnic
2n6477 2n6478.pdf

2N647-22
2N647-22

JMnic Product Specification Silicon NPN Power Transistors 2N6477 2N6478 DESCRIPTION With TO-220 package Low collector saturation voltage High voltage ratings Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power switching circuits Solenoid drivers PINNING PIN DESCRIPTION1 Base Collector;connected to

 9.6. Size:130K  inchange semiconductor
2n6470 2n6471 2n6472.pdf

2N647-22
2N647-22

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6470 2N6471 2N6472 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area High gain at high current APPLICATIONS General-purpose types of switching and linear-amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outlin

 9.7. Size:59K  inchange semiconductor
2n6475 2n6476.pdf

2N647-22
2N647-22

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6475 2N6476 DESCRIPTION With TO-220 package Low collector saturation voltage Excellent safe operating area APPLICATIONS General-purpose medium power for switching and amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified out

 9.8. Size:51K  inchange semiconductor
2n6470.pdf

2N647-22
2N647-22

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6470 DESCRIPTION Excellent Safe Operating Area High DC Current Gain- : hFE= 20-150(Min)@IC = 5A Low Saturation Voltage- : VCE(sat)= 1.3V(Max)@ IC = 5A APPLICATIONS Designed for general-purpose switching and linear amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL

 9.9. Size:120K  inchange semiconductor
2n6477 2n6478.pdf

2N647-22
2N647-22

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6477 2N6478 DESCRIPTION With TO-220 package Low collector saturation voltage High voltage ratings Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power switching circuits Solenoid drivers PINNING PIN DESCRIPTION1 Base Collecto

 9.10. Size:60K  inchange semiconductor
2n6473 2n6474.pdf

2N647-22
2N647-22

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6473 2N6474 DESCRIPTION With TO-220 package Low collector saturation voltage Excellent safe operating area APPLICATIONS General-purpose medium power for switching and amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute ma

Другие транзисторы... 2N6466 , 2N6467 , 2N6468 , 2N6469 , 2N647 , 2N6470 , 2N6471 , 2N6472 , 2SC2655 , 2N6473 , 2N6474 , 2N6475 , 2N6476 , 2N6477 , 2N6478 , 2N6478A , 2N6479 .

 

 
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