2N647-22 Datasheet and Replacement

   Type Designator: 2N647-22
   Material of Transistor: Ge
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 130 °C
   Transition Frequency (ft): 35 MHz
   Collector Capacitance (Cc): 4 pF
   Noise Figure, dB: -
   Package: TO22

2N647-22 Substitution

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2N647-22 Datasheet (PDF)

9.1. Size:511K rca
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9.2. Size:84K central
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Boca Semiconductor Corp. BSC http://www.bocasemi.comhttp://www.bocasemi.com

9.5. Size:154K jmnic
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JMnic Product Specification Silicon NPN Power Transistors 2N6477 2N6478 DESCRIPTION With TO-220 package Low collector saturation voltage High voltage ratings Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power switching circuits Solenoid drivers PINNING PIN DESCRIPTION1 Base Collector;connected to

9.6. Size:130K inchange semiconductor
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6470 2N6471 2N6472 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area High gain at high current APPLICATIONS General-purpose types of switching and linear-amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outlin

9.7. Size:59K inchange semiconductor
2n6475 2n6476.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6475 2N6476 DESCRIPTION With TO-220 package Low collector saturation voltage Excellent safe operating area APPLICATIONS General-purpose medium power for switching and amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified out

9.8. Size:51K inchange semiconductor
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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6470 DESCRIPTION Excellent Safe Operating Area High DC Current Gain- : hFE= 20-150(Min)@IC = 5A Low Saturation Voltage- : VCE(sat)= 1.3V(Max)@ IC = 5A APPLICATIONS Designed for general-purpose switching and linear amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL

9.9. Size:120K inchange semiconductor
2n6477 2n6478.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6477 2N6478 DESCRIPTION With TO-220 package Low collector saturation voltage High voltage ratings Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power switching circuits Solenoid drivers PINNING PIN DESCRIPTION1 Base Collecto

9.10. Size:60K inchange semiconductor
2n6473 2n6474.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6473 2N6474 DESCRIPTION With TO-220 package Low collector saturation voltage Excellent safe operating area APPLICATIONS General-purpose medium power for switching and amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute ma

Datasheet: 2N6466 , 2N6467 , 2N6468 , 2N6469 , 2N647 , 2N6470 , 2N6471 , 2N6472 , C3198 , 2N6473 , 2N6474 , 2N6475 , 2N6476 , 2N6477 , 2N6478 , 2N6478A , 2N6479 .