L2SC2412KRMT1G - Даташиты. Аналоги. Основные параметры
Наименование производителя: L2SC2412KRMT1G
Маркировка: BR
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 0.15 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 180 MHz
Ёмкость коллекторного перехода (Cc): 2 pf
Статический коэффициент передачи тока (hfe): 180
Корпус транзистора: SC74
Аналоги (замена) для L2SC2412KRMT1G
L2SC2412KRMT1G Datasheet (PDF)
l2sc2412krmt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. L2SC2412KQMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC2412KQMT1G ORDERING INFORMATION Series Device Marking Shipping L2SC2
l2sc2412krlt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SC2412KQLT1G ORDERING INFORMATION Series Device Marking Shipping L2SC2412
l2sc2412kqlt1g l2sc2412kqlt3g l2sc2412krlt1g l2sc2412krlt3g l2sc2412kslt1g l2sc2412kslt3g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SC2412KQLT1G ORDERING INFORMATION Series Device Marking Shipping L2SC2412
l2sc2412kqlt1g l2sc2412krlt1g l2sc2412kslt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SC2412KQLT1G ORDERING INFORMATION Series Device Marking Shipping L2SC2412
Другие транзисторы... L2SC1623RLT1G , L2SC1623SLT1G , L2SC1623SWT1G , L2SC2411KQLT1G , L2SC2411KRLT1G , L2SC2412KQLT1G , L2SC2412KQMT1G , L2SC2412KRLT1G , 2SC2625 , L2SC2412KSLT1G , L2SC2412KSMT1G , L2SC3356LT1G , L2SC3356WT1G , L2SC3837LT1G , L2SC3838LT1G , L2SC3838NLT1G , L2SC4081QT1G .
History: HEPS9149
History: HEPS9149
Список транзисторов
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