Биполярный транзистор L2SC3356WT1G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: L2SC3356WT1G
Маркировка: 24
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 7000 MHz
Ёмкость коллекторного перехода (Cc): 0.55 pf
Статический коэффициент передачи тока (hfe): 82
Корпус транзистора: SC70
Аналоги (замена) для L2SC3356WT1G
L2SC3356WT1G Datasheet (PDF)
l2sc3356wt1g.pdf
DATA SHEETLESHAN RADIO COMPANY, LTD.DESCRIPTION L2SC3356WT1GThe L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1Glow noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic. 3S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
l2sc3356wt1g l2sc3356wt3g.pdf
DATA SHEETLESHAN RADIO COMPANY, LTD.DESCRIPTION L2SC3356WT1GThe L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1Glow noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic. 3S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
l2sc3356lt1g.pdf
DATA SHEETLESHAN RADIO COMPANY, LTD.L2SC3356LT1GDESCRIPTIONThe L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1Glow noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic.3S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab
l2sc3356lt1g l2sc3356lt3g.pdf
DATA SHEETLESHAN RADIO COMPANY, LTD.L2SC3356LT1GDESCRIPTIONThe L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1Glow noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic.3S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab
l2sc3838qlt1g.pdf
LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistorL2SC3838QLT1G Features1.High transition frequency.(Typ.fT=3.2GHz)S-L2SC3838QLT1G2.Small rbb`Cc and high gain.(Typ.4ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.34.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AE
l2sc3838lt1g.pdf
LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3838LT1G1.High transition frequency.(Typ.fT=3.2GHz)S-L2SC3838LT1G2.Small rbb`Cc and high gain.(Typ.4ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-
s-l2sc3837t1g.pdf
LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3837T1G1.High transition frequency.(Typ.fT=1.5GHz)2.Small rbb`Cc and high gain.(Typ.6ps)S-L2SC3837T1G3.Small NF.4.We declare that the material of product compliance with RoHS requirements.5.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101
l2sc3838lt1g l2sc3838lt3g.pdf
LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3838LT1G1.High transition frequency.(Typ.fT=3.2GHz)S-L2SC3838LT1G2.Small rbb`Cc and high gain.(Typ.4ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-
l2sc3837lt1g.pdf
LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3837LT1G1.High transition frequency.(Typ.fT=1.5GHz)S-L2SC3837LT1G2.Small rbb`Cc and high gain.(Typ.6ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-
l2sc3837qlt1g.pdf
LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3837QLT1G1.High transition frequency.(Typ.fT=1.5GHz)S-L2SC3837QLT1G2.Small rbb`Cc and high gain.(Typ.6ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AE
l2sc3837t1g.pdf
LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3837T1G1.High transition frequency.(Typ.fT=1.5GHz)2.Small rbb`Cc and high gain.(Typ.6ps)S-L2SC3837T1G3.Small NF.4.We declare that the material of product compliance with RoHS requirements.5.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101
l2sc3838nlt1g.pdf
LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistorL2SC3838NLT1G Features1.High transition frequency.(Typ.fT=3.2GHz)32.Small rbb`Cc and high gain.(Typ.4ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.12MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCollector-Base Voltage V 20 VCBO
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050
