L2SC3356WT1G PDF and Equivalents Search

 

L2SC3356WT1G Specs and Replacement

Type Designator: L2SC3356WT1G

SMD Transistor Code: 24

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 7000 MHz

Collector Capacitance (Cc): 0.55 pF

Forward Current Transfer Ratio (hFE), MIN: 82

Noise Figure, dB: -

Package: SC70

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L2SC3356WT1G datasheet

 ..1. Size:167K  lrc

l2sc3356wt1g.pdf pdf_icon

L2SC3356WT1G

DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356WT1G The L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ... See More ⇒

 ..2. Size:167K  lrc

l2sc3356wt1g l2sc3356wt3g.pdf pdf_icon

L2SC3356WT1G

DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356WT1G The L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ... See More ⇒

 6.1. Size:140K  lrc

l2sc3356lt1g.pdf pdf_icon

L2SC3356WT1G

DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1G DESCRIPTION The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab... See More ⇒

 6.2. Size:140K  lrc

l2sc3356lt1g l2sc3356lt3g.pdf pdf_icon

L2SC3356WT1G

DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1G DESCRIPTION The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab... See More ⇒

Detailed specifications: L2SC2411KRLT1G , L2SC2412KQLT1G , L2SC2412KQMT1G , L2SC2412KRLT1G , L2SC2412KRMT1G , L2SC2412KSLT1G , L2SC2412KSMT1G , L2SC3356LT1G , TIP42 , L2SC3837LT1G , L2SC3838LT1G , L2SC3838NLT1G , L2SC4081QT1G , L2SC4081RT1G , L2SC4081ST1G , L2SC4083NWT1G , L2SC4083PT1G .

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