L2SC3356LT1G Datasheet. Specs and Replacement

Type Designator: L2SC3356LT1G  📄📄 

SMD Transistor Code: R24

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 7000 MHz

Collector Capacitance (Cc): 0.55 pF

Forward Current Transfer Ratio (hFE), MIN: 82

Noise Figure, dB: -

Package: SOT23

  📄📄 Copy 

 L2SC3356LT1G Substitution

- BJT ⓘ Cross-Reference Search

 

L2SC3356LT1G datasheet

 ..1. Size:140K  lrc

l2sc3356lt1g.pdf pdf_icon

L2SC3356LT1G

DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1G DESCRIPTION The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab... See More ⇒

 ..2. Size:140K  lrc

l2sc3356lt1g l2sc3356lt3g.pdf pdf_icon

L2SC3356LT1G

DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1G DESCRIPTION The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab... See More ⇒

 6.1. Size:167K  lrc

l2sc3356wt1g.pdf pdf_icon

L2SC3356LT1G

DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356WT1G The L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ... See More ⇒

 6.2. Size:167K  lrc

l2sc3356wt1g l2sc3356wt3g.pdf pdf_icon

L2SC3356LT1G

DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356WT1G The L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ... See More ⇒

Detailed specifications: L2SC2411KQLT1G, L2SC2411KRLT1G, L2SC2412KQLT1G, L2SC2412KQMT1G, L2SC2412KRLT1G, L2SC2412KRMT1G, L2SC2412KSLT1G, L2SC2412KSMT1G, TIP35C, L2SC3356WT1G, L2SC3837LT1G, L2SC3838LT1G, L2SC3838NLT1G, L2SC4081QT1G, L2SC4081RT1G, L2SC4081ST1G, L2SC4083NWT1G

Keywords - L2SC3356LT1G pdf specs

 L2SC3356LT1G cross reference

 L2SC3356LT1G equivalent finder

 L2SC3356LT1G pdf lookup

 L2SC3356LT1G substitution

 L2SC3356LT1G replacement