L2SC3356LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: L2SC3356LT1G
Código: R24
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 7000 MHz
Capacitancia de salida (Cc): 0.55 pF
Ganancia de corriente contínua (hfe): 82
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar L2SC3356LT1G
L2SC3356LT1G Datasheet (PDF)
l2sc3356lt1g.pdf
DATA SHEETLESHAN RADIO COMPANY, LTD.L2SC3356LT1GDESCRIPTIONThe L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1Glow noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic.3S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab
l2sc3356lt1g l2sc3356lt3g.pdf
DATA SHEETLESHAN RADIO COMPANY, LTD.L2SC3356LT1GDESCRIPTIONThe L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1Glow noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic.3S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab
l2sc3356wt1g.pdf
DATA SHEETLESHAN RADIO COMPANY, LTD.DESCRIPTION L2SC3356WT1GThe L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1Glow noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic. 3S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
l2sc3356wt1g l2sc3356wt3g.pdf
DATA SHEETLESHAN RADIO COMPANY, LTD.DESCRIPTION L2SC3356WT1GThe L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1Glow noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic. 3S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
l2sc3838qlt1g.pdf
LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistorL2SC3838QLT1G Features1.High transition frequency.(Typ.fT=3.2GHz)S-L2SC3838QLT1G2.Small rbb`Cc and high gain.(Typ.4ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.34.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AE
l2sc3838lt1g.pdf
LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3838LT1G1.High transition frequency.(Typ.fT=3.2GHz)S-L2SC3838LT1G2.Small rbb`Cc and high gain.(Typ.4ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-
s-l2sc3837t1g.pdf
LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3837T1G1.High transition frequency.(Typ.fT=1.5GHz)2.Small rbb`Cc and high gain.(Typ.6ps)S-L2SC3837T1G3.Small NF.4.We declare that the material of product compliance with RoHS requirements.5.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101
l2sc3838lt1g l2sc3838lt3g.pdf
LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3838LT1G1.High transition frequency.(Typ.fT=3.2GHz)S-L2SC3838LT1G2.Small rbb`Cc and high gain.(Typ.4ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-
l2sc3837lt1g.pdf
LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3837LT1G1.High transition frequency.(Typ.fT=1.5GHz)S-L2SC3837LT1G2.Small rbb`Cc and high gain.(Typ.6ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-
l2sc3837qlt1g.pdf
LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3837QLT1G1.High transition frequency.(Typ.fT=1.5GHz)S-L2SC3837QLT1G2.Small rbb`Cc and high gain.(Typ.6ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AE
l2sc3837t1g.pdf
LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3837T1G1.High transition frequency.(Typ.fT=1.5GHz)2.Small rbb`Cc and high gain.(Typ.6ps)S-L2SC3837T1G3.Small NF.4.We declare that the material of product compliance with RoHS requirements.5.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101
l2sc3838nlt1g.pdf
LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistorL2SC3838NLT1G Features1.High transition frequency.(Typ.fT=3.2GHz)32.Small rbb`Cc and high gain.(Typ.4ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.12MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCollector-Base Voltage V 20 VCBO
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
