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L2SC3356LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: L2SC3356LT1G
   Código: R24
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 7000 MHz
   Capacitancia de salida (Cc): 0.55 pF
   Ganancia de corriente contínua (hfe): 82
   Paquete / Cubierta: SOT23
 

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L2SC3356LT1G Datasheet (PDF)

 ..1. Size:140K  lrc
l2sc3356lt1g.pdf pdf_icon

L2SC3356LT1G

DATA SHEETLESHAN RADIO COMPANY, LTD.L2SC3356LT1GDESCRIPTIONThe L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1Glow noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic.3S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab

 ..2. Size:140K  lrc
l2sc3356lt1g l2sc3356lt3g.pdf pdf_icon

L2SC3356LT1G

DATA SHEETLESHAN RADIO COMPANY, LTD.L2SC3356LT1GDESCRIPTIONThe L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1Glow noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic.3S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab

 6.1. Size:167K  lrc
l2sc3356wt1g.pdf pdf_icon

L2SC3356LT1G

DATA SHEETLESHAN RADIO COMPANY, LTD.DESCRIPTION L2SC3356WT1GThe L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1Glow noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic. 3S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

 6.2. Size:167K  lrc
l2sc3356wt1g l2sc3356wt3g.pdf pdf_icon

L2SC3356LT1G

DATA SHEETLESHAN RADIO COMPANY, LTD.DESCRIPTION L2SC3356WT1GThe L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1Glow noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic. 3S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

Otros transistores... L2SC2411KQLT1G , L2SC2411KRLT1G , L2SC2412KQLT1G , L2SC2412KQMT1G , L2SC2412KRLT1G , L2SC2412KRMT1G , L2SC2412KSLT1G , L2SC2412KSMT1G , C3198 , L2SC3356WT1G , L2SC3837LT1G , L2SC3838LT1G , L2SC3838NLT1G , L2SC4081QT1G , L2SC4081RT1G , L2SC4081ST1G , L2SC4083NWT1G .

History: MMBT3250A | 2SC3025 | BUY38-7 | KT961V

 

 
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