All Transistors. L2SC3837LT1G Datasheet

 

L2SC3837LT1G Datasheet and Replacement


   Type Designator: L2SC3837LT1G
   SMD Transistor Code: AP
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1500 MHz
   Collector Capacitance (Cc): 0.9 pF
   Forward Current Transfer Ratio (hFE), MIN: 56
   Noise Figure, dB: -
   Package: SOT23
 

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L2SC3837LT1G Datasheet (PDF)

 ..1. Size:74K  lrc
 l2sc3837lt1g.pdf pdf_icon

L2SC3837LT1G

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3837LT1G1.High transition frequency.(Typ.fT=1.5GHz)S-L2SC3837LT1G2.Small rbb`Cc and high gain.(Typ.6ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-

 6.1. Size:94K  lrc
 s-l2sc3837t1g.pdf pdf_icon

L2SC3837LT1G

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3837T1G1.High transition frequency.(Typ.fT=1.5GHz)2.Small rbb`Cc and high gain.(Typ.6ps)S-L2SC3837T1G3.Small NF.4.We declare that the material of product compliance with RoHS requirements.5.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101

 6.2. Size:79K  lrc
 l2sc3837qlt1g.pdf pdf_icon

L2SC3837LT1G

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3837QLT1G1.High transition frequency.(Typ.fT=1.5GHz)S-L2SC3837QLT1G2.Small rbb`Cc and high gain.(Typ.6ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AE

 6.3. Size:94K  lrc
 l2sc3837t1g.pdf pdf_icon

L2SC3837LT1G

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3837T1G1.High transition frequency.(Typ.fT=1.5GHz)2.Small rbb`Cc and high gain.(Typ.6ps)S-L2SC3837T1G3.Small NF.4.We declare that the material of product compliance with RoHS requirements.5.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101

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Datasheet: L2SC2412KQLT1G , L2SC2412KQMT1G , L2SC2412KRLT1G , L2SC2412KRMT1G , L2SC2412KSLT1G , L2SC2412KSMT1G , L2SC3356LT1G , L2SC3356WT1G , 13005 , L2SC3838LT1G , L2SC3838NLT1G , L2SC4081QT1G , L2SC4081RT1G , L2SC4081ST1G , L2SC4083NWT1G , L2SC4083PT1G , L2SC4083PWT1G .

History: CHDTD123YKGP | 2SC3808 | 2SC426 | 2SC4103 | BDX54AFI | CS1978A | TIP560

Keywords - L2SC3837LT1G transistor datasheet

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