L2SC3837LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: L2SC3837LT1G
   Código: AP
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 18 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 1500 MHz
   Capacitancia de salida (Cc): 0.9 pF
   Ganancia de corriente contínua (hfe): 56
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de transistor bipolar L2SC3837LT1G

L2SC3837LT1G Datasheet (PDF)

..1. Size:74K lrc
l2sc3837lt1g.pdf

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3837LT1G1.High transition frequency.(Typ.fT=1.5GHz)S-L2SC3837LT1G2.Small rbb`Cc and high gain.(Typ.6ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-

6.1. Size:94K lrc
s-l2sc3837t1g.pdf

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3837T1G1.High transition frequency.(Typ.fT=1.5GHz)2.Small rbb`Cc and high gain.(Typ.6ps)S-L2SC3837T1G3.Small NF.4.We declare that the material of product compliance with RoHS requirements.5.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101

6.2. Size:79K lrc
l2sc3837qlt1g.pdf

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3837QLT1G1.High transition frequency.(Typ.fT=1.5GHz)S-L2SC3837QLT1G2.Small rbb`Cc and high gain.(Typ.6ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AE

6.3. Size:94K lrc
l2sc3837t1g.pdf